SI9936DY,518

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The SI9936DY,518 application field and working principle falls into the category of Transistors - FETs, MOSFETs - Arrays. As its name implies, the SI9936DY,518 is an array of four N-Channel enhancement mode MOSFETs. This type of FET is designed to provide high gain, low input capacitance, and excellent high frequency characteristics.

The SI9936DY,518 is commonly utilized as a switch, buffer, amplifier, and in analog and digital circuits. It is an ideal choice for applications ranging from high-voltage power conversion, switching power supplies, protection circuits, voltage-controlled multiplexers, load drivers, relay drivers, solenoid drivers, and power circuit prototyping.

A major benefit of using the SI9936DY,518 is its low-channel-resistance. This provides superior motor control with up to 5.0A of continuous drain current. In addition, the FET can withstand voltages up to 32V with a low on resistance of 0.1 ohms.

The working principle of the SI9936DY,518 is based on a four N-Channel MOSFET. When an electrical signal is applied to the gate, a small current flows into the channel between the drain and source. This current causes the electron charges to build up on the gate oxide and thus create a strong electronfield between the drain and source. As a result, the source-drain current becomes much greater than the gate current and the MOSFET turns ON.

Using the SI9936DY,518 is easy and straightforward. All that is needed is a flat-pack and solderable terminals. The FET is supplied as a complete unit, including four pins for each MOSFET and one common pin for gate connection. It can be quickly and conveniently installed into your circuit board without the need for additional components.

Due to its outstanding features and low cost, the SI9936DY,518 is widely used in the consumer, telecommunications, and industrial sectors. Its wide range of applications and strong performance capability, make it a perfect choice for projects requiring superior switching, protection and control.

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