| Allicdata Part #: | 1N5643MS-ND |
| Manufacturer Part#: |
1N5643 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | 1N5643 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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TVS - Diodes is a type of semiconductor device which is used for protection of a component or system from high voltage transients or surges. The most frequently used type of TVS diodes are the fast-switching silicon diodes, which use the avalanche breakdown effect for protection.
1N5643 is a high-power transient voltage suppressor diode, which is widely used in various electronic and electrical equipment. It is designed to protect the system or component from voltage surges that can be caused due to electrostatic discharges, lightning and AC line transients. This diode is capable of handling current up to 3 Amps and can also withstand peak surge currents up to 500 Amps.
It is made up of two sections- a schematic diode and a thermal diode. The schematic diode acts as a breakdown diode for diverting the surge current, and the thermal diode acts as a reverse bias diode for dissipating the energy of the surge.
1N5643 is widely used in many applications such as switching power supplies, appliances, telecom switching systems, automotive system, personal computers, and consumer electronics protection. It is capable of suppressing surges from 6V to 220V, and can withstand peak pulse current of 200 Amps as per the MIL-STD-464A standard.
The working principle of 1N5643 is as follows. It works by clamping off the surge voltage upto its breakdown voltage level. When a voltage surge occurs, the power dissipates in the breakdown diode, thus preventing over-voltage transients from reaching the components. The dissipated energy is absorbed by the thermal diode, which serves the purpose of limiting the thermal dissipation.
The 1N5643 is designed to provide surge protection over a wide range of operating conditions, and is also capable of withstanding extreme temperature and humidity conditions. It is also compatible with standard Telecommunications and Telephony wiring, making it suitable for use as a surge suppressor in communication systems.
In addition, the 1N5643 is also equipped with a built-in fast-recovery circuit, which allows the diode to reset itself in a few nano-seconds after the surge has passed. This feature makes it ideal for protecting sensitive electronic equipment or components from damage due to destructive surge currents.
Overall, 1N5643 is an excellent choice for providing surge protection in various applications. Thanks to its high surge capability, fast-recovery circuit, and wide range of operating conditions, it has become a popular choice for providing effective surge protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5664 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
| 1N5633 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5639 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5624GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5629A | Microsemi Co... | 11.88 $ | 13 | TVS DIODE 5.8V 10.5V DO13 |
| 1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
| 1N5629 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5644A | Microsemi Co... | 15.37 $ | 47 | TVS DIODE 25.6V 41.4V DO1... |
| 1N5630A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 6.4V 11.3V DO13 |
| 1N5652 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5658 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
| 1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
| 1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
| 1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5619GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5635A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 10.2V 16.7V DO1... |
| 1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5647 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5614GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5662 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5621US | Microsemi Co... | 9.87 $ | 1000 | DIODE GEN PURP 800V 1A D5... |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5632 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
1N5643 Datasheet/PDF