1N5645A Allicdata Electronics
Allicdata Part #:

1N5645AMS-ND

Manufacturer Part#:

1N5645A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 28.2V 45.7V DO13
More Detail: N/A
DataSheet: 1N5645A datasheet1N5645A Datasheet/PDF
Quantity: 10
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Stock 10Can Ship Immediately
Specifications
Voltage - Clamping (Max) @ Ipp: 45.7V
Supplier Device Package: DO-13
Package / Case: DO-13
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 33A
Series: --
Voltage - Breakdown (Min): 31.4V
Voltage - Reverse Standoff (Typ): 28.2V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

The 1N5645A application field and working principle affects a wide variety of electronic systems. Applications include surge protection and transient protection in automotive, industrial and consumer devices, as well as any general level of protection required in complex electronics systems. These systems are used for voltage and current regulation, or to defend against surges and short-term electrical spikes. The 1N5645A is a low-voltage TVS diode which works by providing a clamping or blocking voltage above a certain threshold.

Internally, the 1N5645A consists of two types of components: a Zener diode and a MOSFET. The diode is designed to clamp the voltage when it exceeds a certain threshold, while the MOSFET provides current protection at higher voltages. When a voltage spike appears, the Zener diode begins to conduct, thus creating a path for the excess electricity which it can easily absorb without damaging itself or any other components. The MOSFET provides a stronger current protection, ensuring that any high current surges are diverted away from sensitive components.

When a voltage spike is detected, the diode will quickly clamp the voltage to a safe voltage range, ensuring that no permanent damage is done to the device. When the voltage returns to normal, the diode will stop conducting and the MOSFET will prevent any further power surges. The combination of the two components creates an element that can handle large amounts of power surges with minimal damage.

The 1N5645A is manufactured using a state-of-the-art process and is fully compliant with RoHS standards. It offers superior protection against EMI, ESD, and other forms of physical damage. The device also features a low clamping voltage, low leakage current, and low capacitance. All of these factors combine to create a device that is capable of protecting against voltage spikes, power surges, and other unexpected events.

For those looking for the most protection available in a TVS diode, the 1N5645A is an ideal solution. It is capable of absorbing large amounts of power and dissipating the electricity in a safe and controlled manner. Its low clamping voltage ensures that devices are not damaged, while its low capacitance and leakage current ensure that no interference is caused. The device is also RoHS compliant and offers superior protection against both EMI and ESD.

The specific data is subject to PDF, and the above content is for reference

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