| Allicdata Part #: | 1N5633MS-ND |
| Manufacturer Part#: |
1N5633 |
| Price: | $ 11.88 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | 1N5633 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 10.79570 |
Specifications
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
Description
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TVS - Diodes
Transient Voltage Suppressor (TVS) Diodes, also known as Transient Voltage Stabilizer Diodes, are semiconductor devices which are specifically designed to protect sensitive electronic components from the damaging effects of transient (or ‘surge’) voltages. By quickly conducting excessive voltage away from the device, it ensures that the voltage waveform is limited and that the device remains powered and operational.1N5633 is a Transient Voltage Suppressor (TVS) diode that is designed to protect electronic circuits from damages caused by over-voltage transients, and can absorb large amounts of energy. This diode is manufactured to meet the requirements of International Rectifier (IR), AVX, NEC, Texas Instruments, Nippon Chemi-Con, and Vishay.The application field of the 1N5633 diode includes automotive, aerospace, industrial, and consumer applications, and it is a surge protection device for use in circuit protection and EMI/RFI attenuation.Working Principle of 1N5633
The 1N5633 is designed specifically to guard sensitive electronic components from transient voltage surges. It works by quickly conducting any over-voltage away from the protected device, limiting the amount of voltage that can reach the protected component and keeping it operational.The 1N5633 diode is designed to carry very low power consumption and ensures a higher device life cycle due to its low leakage current characteristic. Its low clamping voltage and low capacitance make it suitable for a broad range of applications across multiple industries.It is a two-lead device with an anode and cathode. The anode is typically connected to the power line and intercepted by the diode, while the cathode is connected to ground. When a transient voltage surge appears at the anode, the high voltage at the anode will be conducted by the diode to the ground/cathode and be absorb, thus preventing it from reaching the protected component.The 1N5633 is also an ideal choice for EMI/RFI attenuation as it is capable of absorbing a large amount of energy. It also has a fast response time and a low leakage current.Conclusion
The 1N5633 Transient Voltage Suppressor (TVS) diode is an ideal solution for protecting sensitive electronic devices from transient voltage surges. It is a two-lead device that combines low power consumption and low leakage current characteristic that result in a higher device life cycle. Its fast reaction time and capability to absorb large amounts of energy make it suitable for a broad range of applications, such as automotive, aerospace, industrial, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "1N56" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5664 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
| 1N5633 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5639 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5624GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5629A | Microsemi Co... | 11.88 $ | 13 | TVS DIODE 5.8V 10.5V DO13 |
| 1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
| 1N5629 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5644A | Microsemi Co... | 15.37 $ | 47 | TVS DIODE 25.6V 41.4V DO1... |
| 1N5630A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 6.4V 11.3V DO13 |
| 1N5652 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5658 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
| 1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
| 1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
| 1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5619GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5635A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 10.2V 16.7V DO1... |
| 1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5647 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5614GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5662 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5621US | Microsemi Co... | 9.87 $ | 1000 | DIODE GEN PURP 800V 1A D5... |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5632 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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1N5633 Datasheet/PDF