Allicdata Part #: | 1N5624GPHE3/54-ND |
Manufacturer Part#: |
1N5624GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3A DO201AD |
More Detail: | Diode Standard 200V 3A Through Hole DO-201AD |
DataSheet: | 1N5624GPHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N5624 |
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Diodes are essential components for the functioning of the electrical and electronic systems. The 1N5624GPHE3/54 is a single rectifier diode designed for applications requiring high frequency operation and improved thermal shock characteristics.
The 1N5624GPHE3/54 uses advanced nitride-oxide rectifying technology and consists of a diffusedly-doped region of silicon connected to two electrodes. It is composed of an N+ region and a P+ region. When used in a voltage-regulating circuit, the diode allows current to flow in one direction and blocks current from flowing in the opposite direction. This is due to the Nature of rectification employed in the diodes. The 1N5624GPHE3/54 is suitable for direct application up to 100V in applications such as for general purpose rectification, bridge and power supply rectification, voltage-regulated power supplies, pulse power and automotive applications.
The 1N5624GPHE3/54 diode is a high frequency rectifier diode that can be used for applications requiring high frequency operation and improved thermal shock characteristics. It is designed for reliability, high surge current and high efficiency, making it suitable for high frequency applications. It has a very low reverse leakage current and high capacitance performance, which allows it to be used in rectifying circuits operating at high frequency.
The working principle is simple. When a voltage is applied across the diode, electrons move from the N+ region to the P+ region, causing current to flow in one direction. As long as the voltage is maintained, the current will flow and charge will continue to move along the semiconductor-electrode junction. Once the voltage drops, the electrons that have moved away from the N+ region will be unable to move back and the diode will stop conducting current. This effect is known as the rectifying effect and is what allows diodes to be used as regulators or switches to control the flow of current in circuits.
The 1N5624GPHE3/54 is a single rectifier diode designed for applications requiring high frequency operation and improved thermal shock characteristics, making it suitable for various types of power supplies. This makes it a popular choice for use in voltage-regulating circuits, bridge rectification and power supply rectification. It has a very low reverse leakage current and superior capacitance characteristics, making it an ideal diode for use in rectifying circuits operating at high frequencies.
The specific data is subject to PDF, and the above content is for reference
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