| Allicdata Part #: | 1N5630AMS-ND |
| Manufacturer Part#: |
1N5630A |
| Price: | $ 11.88 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 6.4V 11.3V DO13 |
| More Detail: | N/A |
| DataSheet: |  1N5630A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 10.79570 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 11.3V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 132A |
| Series: | -- |
| Voltage - Breakdown (Min): | 7.13V |
| Voltage - Reverse Standoff (Typ): | 6.4V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
| TVS - Diodes |
|---|
| 1N5630A application field and working principle |
| Transient Voltage Suppressor (TVS) diodes are commonly used electronics component for protecting a device from high voltage, transient voltage, and electric shock. The 1N5630A is a diode designed specifically to protect against spikes and transient voltage. This component is used in a variety of electrical systems to protect the device from potential damage under a wide range of transient conditions. |
| TVS diodes are constructed with a metal–oxide–semiconductor (MOS) technology that provides high power handling capability. The 1N5630A utilizes this technology to provide protection for high and low voltage transients. Its main application is in consumer electronics devices, such as televisions, monitors, set-top boxes, and gaming consoles. In addition, it can be used in industrial applications, such as medical equipment, power supplies, and audio/video systems. |
| The 1N5630A has a number of features that make it ideal for protecting against high voltage transients. It has an instantaneous response time of less than 10 nanoseconds, a voltage range of 11V to 30V, and a breakdown voltage of 30V. It is also designed to absorb voltages up to 3.3A and can withstand up to 8.4A of peak operating current. The diode is also able to dissipate up to 1.5W of power and can be used in temperatures from -55°C (-67°F) to 125°C (257°F). This wide temperature range makes the 1N5630A suitable for use in a variety of environments. |
| The working principle of the 1N5630A is based on its construction. The diode is constructed with two regions: one anode and one cathode. When a high voltage is applied to the diode, a current flows from the anode to the cathode through the p-n junction. This current then causes the capacitance of the diode to become charged, thus leading to reduced current flow. At the same time, the reverse voltage is absorbed by the diode and removed from the system. This protects the system from any potential damage associated with high voltage transients. |
| The 1N5630A provides a reliable and cost-effective solution for protection against high voltage transients. Its MOS technology provides high power handling capability, while its wide temperature range makes it suitable for use in a wide range of environments. Additionally, its fast response time and ability to absorb high voltages make it an ideal choice for use in consumer electronics and industrial applications. |
The specific data is subject to PDF, and the above content is for reference
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