| Allicdata Part #: | 1N5629MS-ND |
| Manufacturer Part#: |
1N5629 |
| Price: | $ 11.88 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | 1N5629 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 10.79570 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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TVS - Diodes
TVS (Transient Voltage Suppressor) diodes are an important component of electronic systems, mainly used to protect against transient voltage and current. They are designed to clamp the voltage by limiting the energy released during a surge. This increases the reliability of the system by protecting against damage caused by power surges and overvoltage conditions. 1N5629 is an example of a TVS diode that combines high performance and low cost.
1N5629 Applications
1N5629 is designed to protect sensitive electronic components from overvoltages in power supplies, as well as in communications, computer and industrial control applications. It can provide protection from high-voltage transients up to 1000W (8/20μs waveform) with a peak pulse power rating of up to 200A. The device\'s low static capacitance, high breakdown voltage, low clamping voltage, and low leakage current make it ideal for many high-performance applications. It is also suitable for use in high-frequency circuits because of its low insertion loss.
1N5629 Working Principle
The 1N5629 is a bidirectional device with a symmetrical construction. The diode consists of two PN junctions in series connected anode to cathode. When an overvoltage occurs, the diode conducts in the reverse direction of the voltage. The current passes through the junctions, causing the voltage to be clamped at a safe level. During normal operation, the reverse voltage of the diode should be kept below the rated breakdown voltage.
This protective diode is designed to provide a high speed response to voltage transients. It is capable of suppressing voltages up to 367V, depending on the model, and can dissipate up to 1500 W at 4.5V. The device also has a low capacitance rating of 16pF. This means that it can handle high-frequency voltage transients depending on frequency and waveform.
Conclusion
The 1N5629 is a versatile and dependable TVS diode that can provide the necessary voltage and current protection for a variety of applications. It is designed to be used in a variety of environments and is capable of handling high-frequency transients. Its low cost and high performance make it an attractive solution for protecting against transient voltages and current.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5664 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
| 1N5633 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5639 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5624GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5629A | Microsemi Co... | 11.88 $ | 13 | TVS DIODE 5.8V 10.5V DO13 |
| 1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
| 1N5629 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5644A | Microsemi Co... | 15.37 $ | 47 | TVS DIODE 25.6V 41.4V DO1... |
| 1N5630A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 6.4V 11.3V DO13 |
| 1N5652 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5658 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
| 1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
| 1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
| 1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5619GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5635A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 10.2V 16.7V DO1... |
| 1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5647 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5614GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5662 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5621US | Microsemi Co... | 9.87 $ | 1000 | DIODE GEN PURP 800V 1A D5... |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5632 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
1N5629 Datasheet/PDF