| Allicdata Part #: | 1N5657MS-ND |
| Manufacturer Part#: |
1N5657 |
| Price: | $ 0.00 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 81V 144V DO13 |
| More Detail: | N/A |
| DataSheet: | 1N5657 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Voltage - Clamping (Max) @ Ipp: | 144V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 10.4A |
| Series: | -- |
| Voltage - Breakdown (Min): | 90V |
| Voltage - Reverse Standoff (Typ): | 81V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Discontinued at Digi-Key |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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Transient voltage suppression diodes, also known as TVS diodes, are devices designed to protect circuits and components from damage due to overvoltage and high current transients. TVS diodes can be found in many types of electronic applications, from consumer applications to higher voltage industrial applications. The type of TVS diode used in an application will be determined by the voltage breakdown requirements, the peak pulse power it needs to handle, its physical size, and/or its response time. One of the most popular TVS diodes used in many consumer, industrial, and military applications is the 1N5657.
The 1N5657 is a unidirectional avalanche diode designed for use in the stopping of power overvoltage transients. It has a maximum breakdown voltage of 74V, a maximum clamping voltage of 90V, and an off-state capacitance of 0.2 pF. The 1N5657 is designed to operate at low current levels, and is available in multiple sizes from the small SOT-23 package to the larger TO-220 package.
The working principle of the 1N5657 TVS diode is based on the avalanche effect, which is the sudden increase in current due to a sudden increase in voltage. The 1N5657 TVS diode is designed with a breakdown voltage of 74V, which is the voltage threshold where the avalanche effect occurs. When a voltage higher than 74V is present, the diode breaks down, causing the current to spike. This mechanism provides overvoltage and transient protection to the circuit or component.
The 1N5657 TVS diode is used in a wide range of applications, from consumer devices to industrial devices. It can be used for surge and overvoltage protection in off-line power supplies, as well as in gate protection for high-speed I/O interfaces. The 1N5657 can also be used for surge protection in automotive applications, as well as in ground looping protection for circuit boards. Additionally, the 1N5657 can be used in telecommunications networks as well as lightning protection systems.
In summary, the 1N5657 TVS diode is a unidirectional avalanche diode designed to protect against transient overvoltage and high-current transients. It has a breakdown voltage of 74V, a clamping voltage of 90V, and an off-state capacitance of 0.2 pF. The 1N5657 is used in many consumer, industrial, and military applications for surge protection, as well as for gate and ground protection in circuit boards. The 1N5657 TVS diode is a reliable and cost-effective solution for protecting circuits and components from transient overvoltage and high current transients.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5663A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 145V 234V DO13 |
| 1N5623GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5665A | Microsemi Co... | 15.37 $ | 34 | TVS DIODE 171V 274V DO13 |
| 1N5618GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5643A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 23.1V 37.5V DO1... |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5654 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
| 1N5625GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5642A | Microsemi Co... | -- | 26 | TVS DIODE 20.5V 33.2V DO1... |
| 1N5658A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 94V 152V DO13 |
| 1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
| 1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
| 1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
| 1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
| 1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
| 1N5617GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N5657 | Microsemi Co... | -- | 1000 | TVS DIODE 81V 144V DO13 |
| 1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
| 1N5614GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
| 1N5617GP-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N5632A | Microsemi Co... | 11.88 $ | 25 | TVS DIODE 7.78V 13.4V DO1... |
| 1N5642 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
| 1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
| 1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
| 1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
| 1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
TVS DIODE 31V 56.4V DO214AB
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TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
1N5657 Datasheet/PDF