Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

2N3498 is a type of bipolar junction transistor, abbreviated as BJT. This is a three-layer, single device composed of two p-channel and one n-channel. It is designed for application in medium power low voltage circuits, specifically for switching, amplification, and also for signal processing.

Application Field and Working Principle of 2N3498

The 2N3498 transistor can be used in a wide range of applications, including medium power switching, signal processing, amplification, and so on. It is suitable for both low voltage and medium power circuits.

The working principle of the 2N3498 BJT is that current flows between two terminals, namely the emitter and collector, due to the forward bias in the base. This works because the base is acting as the controlling terminal. By varying the current through the base, the amount of current that flows from the emitter to the collector can be controlled, then providing amplification or switching functions.

The 2N3498 BJT is composed of two p-channel and one n-channel semiconductor chips. On the p-channel side, the outermost semiconductor is an n-type and the innermost is a p-type. This is the opposite on the n-channel side. The two semiconductors are connected by two junctions between them, the emitter and collector. This junction is called a base-emitter junction. By applying a forward bias, a relatively positive potential is applied to the base, which makes the collector current flow.

The reverse bias is another element of the 2N3498 BJT. This is when the base is given a negative potential, so current is prevented from flowing from the collector to the emitter and back. This reverse bias voltage, also known as Reverse breakdown voltage, is a very important characteristic of this transistor and can be used to fully protect it from over-current, thus making it highly reliable.

Conclusion

The 2N3498 transistor is a type of silicon BJT designed for medium power low voltage applications. It is a three-layer, single device composed of two p-channel and one n-channel semiconductor chips, connected by two junctions between them, the emitter and collector. The working principle of this device is that current flows between the two terminals due to a forward bias in the base acting as a controlling terminal. The reverse bias voltage is another important characteristic of this transistor and can be used to fully protect it from over-current making it highly reliable.

The specific data is subject to PDF, and the above content is for reference