Allicdata Part #: | 2N3420S-ND |
Manufacturer Part#: |
2N3420S |
Price: | $ 12.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN POWER SILICON TRANSISTORS |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N3420S Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 11.07880 |
Specifications
Series: | * |
Part Status: | Active |
Description
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.2N3420S Application Field and Working Principle
Introduction
2N3420S is a single-bipolar transistor which is typically used for general-purpose switching and high-frequency amplifier applications. It is also highly reliable, making it a favorite choice for a variety of applications.Technical Specifications
2N3420S is a medium power NPN silicon transistor with 2A collector current. It is a three-pin device with the emitter, base, and collector (EBC) pins. The collector and emitter have a diode connection when biased in the forward direction. The transit frequency of 2N3420S is up to 300MHz with a MAX Collector-Base Voltage of 25V and a Maximum Collector Current of 2A.Applications
Due to its versatility, reliability, and high frequency response, 2N3420S is widely used in many different applications. Below are some of its popular applications.- Low noise amplifiers
- Switching applications
- High-frequency amplifiers
- Voltage regulators
- Signal processing
Working Principle
2N3420S operates on the principle of a standard bipolar junction transistor (BJT). The collector-emitter voltages and collector-base voltage controls the base current, which in turn affects the collector current. The transistor acts to allow current flow between collector and emitter depending on the biasing of the base. This biasing will form an active region that can be used for signal processing, switching, or amplification.The collector-emitter junction essentially works as a variable resistor. When the base-emitter voltage is low, the resistance between the collector and emitter decreases. This decrease in resistance creates a path for current to flow from the collector to the emitter. However, when the base-emitter voltage is high, the resistance increases, and current no longer flows from the collector to the emitter. The 2N3420S also has a reverse-biased collector-emitter junction which acts as a protection diode, protecting the transistor from over-voltage.Having a diode connection in the collector-emitter junction helps to protect the transistor from over-voltage. It also allows the transistor to have a high frequency response, enabling it to work efficiently at high frequencies.Depending on the circuit configuration, a voltage regulator can be formed by utilizing several transistors connected together and biased to control the current by the base connection.Conclusion
To sum up, 2N3420S is a single-bipolar transistor which is typically used for general-purpose switching and high-frequency amplifier applications. It is a versatile, reliable, and highly efficient device that can be used for many different purposes. The operating principle is based on a standard bipolar junction transistor with a diode connection between the collector and emitter. This diode connection helps protect the transistor from over-voltage and also allows for high-frequency operation. It can be used for switching and signal processing applications as well as voltage regulators.The specific data is subject to PDF, and the above content is for reference
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