Allicdata Part #: | 2N4400TFR-ND |
Manufacturer Part#: |
2N4400TFR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 625mW Thro... |
DataSheet: | 2N4400TFR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 150mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4400 |
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。Introduction to 2N4400TFR Transistor
The 2N4400TFR is a general purpose NPN Bipolar Junction Transistor (BJT). With its small size, high current, and low power dissipation, the 2N4400TFR is a popular design choice for many electronic applications. In this article, we will discuss the application fields and working principle of the 2N4400TFR.
Application Fields of the 2N4400TFR
The 2N4400TFR is a versatile device that can be used in a variety of applications. It is most commonly used in small signal amplifiers, as well as in logic circuit switching. Additionally, the 2N4400TFR can be used in audio systems, such as amplifiers, preamplifiers, and mixers, as well as in radio frequency (RF) amplifiers, such as cellular and Bluetooth applications. Other applications include LED driver circuits and voltage regulator modules.
Working Principle of the 2N4400TFR
The 2N4400TFR is a NPN type BJT, which is comprised of three layers of silicon. The base of the transistor receives a small amount of current, which is amplified by the Collector and Emitter. When a current is applied to the base, it allows more current to flow from the Collector to the Emitter. This amplifies the input current, the amplification factor being determined by the ratio of Collector current to Base current.
The 2N4400TFR can operate in either a common emitter configuration (CEC) or a common base configuration (CBC). In a CEC, the current gain (hfe) is proportional to the amount of current supplied to the base, while in a CBC, the current gain is proportional to the voltage applied to the base.
The 2N4400TFR is often used in low power applications, as it has a low power dissipation of up to 250mW. Additionally, it has a low collector output impedance and a high input impedance, making it suitable for use in applications where power efficiency is important.
Conclusion
The 2N4400TFR is a versatile NPN type BJT that has diverse application fields and a simple working principle. Its small size, low power dissipation and high current rating make it ideal for a variety of applications, from small signal amplifiers to LED driver circuits. By understanding the application fields and the working principle of the 2N4400TFR, designers can better choose the right transistor for their designs.
The specific data is subject to PDF, and the above content is for reference
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