2N4402TAR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to 2N4402TAR

The 2N4402TAR is a low power, plastic encapsulated, NPN, silicon transistor designed for general purpose switching and amplifier applications. It is a single, bipolar junction transistor (BJT) with an emitter-base voltage range of 4.5V to 50V and a collector-emitter voltage range of 5V to 80V. It is available in a plastic TO-92 package (also referred to as a "3-Pin Pack".)

Application Fields

The 2N4402TAR transistor is frequently used in many consumer electronic devices because of its low power consumption and cost efficient production. The 2N4402TAR is ideal for use in consumer electronics such as TVs, laptop computers, smart phones, digital audio players, and other small home appliances. Moreover, the 2N4402TAR is also used in a variety of industrial applications, such as motor control, amplifiers, power drivers, and lighting control.

Due to its low power consumption and versatility, the 2N4402TAR is also an excellent choice for a wide range of high frequency application. It is suitable for the use of RF amplifiers, RF switching, high-frequency amplifiers, DC-DC converters, precision clocking circuits and much more.

Working Principle

In order to explain the 2N4402TAR\'s working principle, it is important to understand the basics of how a transistor works. A transistor is a semiconductor device that acts as a switch or amplifier. It is composed of three terminals – an emitter, a base, and a collector. When current is passed through the base, it controls the flow of current from the emitter to the collector. The amount of current from the emitter to the collector is determined by the size of the base current.

When the base current is increased, the transistor is said to be in a ‘saturated state’, which means it is in the ‘on’ state. This causes the transistor to amplify the current flowing from the emitter to the collector. When the base current is decreased, the transistor is said to be in the ‘cutoff state’, which means it is in the ‘off’ state. In this state, the transistor is not amplifying the current from the emitter to the collector.

The 2N4402TAR transistor operates on the same principle as other BJT transistors, but with improved characteristics. It has a high current gain, or hFE, which is a measure of how much the base current controls the collector-emitter current. The 2N4402TAR has a hFE range of 50 to 500 and a gain-bandwidth product, or fT, of 300MHz to 400MHz. This makes it ideal for applications that require high-speed switching or amplification.

Conclusion

The 2N4402TAR is a low power, plastic encapsulated, NPN, silicon transistor designed for general purpose switching and amplifier applications. It is a single, bipolar junction transistor with an emitter-base voltage range of 4.5V to 50V and a collector-emitter voltage range of 5V to 80V. It is frequently used in many consumer electronic devices, industrial applications, and a variety of high frequency applications. Its high current gain and gain-bandwidth product make it an excellent choice for applications that require high-speed switching or amplification.

The specific data is subject to PDF, and the above content is for reference