Allicdata Part #: | 2N4401_J05Z-ND |
Manufacturer Part#: |
2N4401_J05Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625m... |
DataSheet: | 2N4401_J05Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4401 |
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2N4401_J05Z Application Field and Working Principle
2N4401_J05Z is categorized under transistors – Bipolar (BJT) – Single. It is a NPN general purpose transistor frequently used for switching, amplifying and switching current/voltage signals. The device was first released by 2N4401_J05Z makers in 2005 and over the years since then, this transistor has become one of the most widely used transistors on the market.
Parameters of 2N4401_J05Z
2N4401_J05Z is a silicon, NPN, general-purpose transistor with a maximum voltage rating of 40V. It has a maximum power dissipation of 500mW and a maximum collector current rating of 600mA. Its transconductance gain is 300-600. Other parameters include collector-emitter saturation voltage and voltage gain.
Application Areas of 2N4401_J05Z
2N4401_J05Z is mainly used for digital, analogue and mixed signal applications. It is primarily used for digital circuits where its highest switching speed, wide temperature range and good electrical characteristics make it an excellent choice. It is also used as a driver component in low frequency circuits and as a general switching component. Other applications include high-frequency radio amplifiers, pulse circuits, power and instrumentation.
Working Principle of 2N4401_J05Z
The working principle of 2N4401_J05Z is based on its internal structure. It is made of two p-type and one n-type semiconductor layers placed adjacent to each other. The n-type layer has a negative charge, and the p-type layers has a positive charge. When an input current flows through the base-emitter junction, it triggers an internal electric field which causes current to be generated in the collector-emitter junction. This current is known as the collector current. As the collector current increases, the collector-emitter voltage decreases, resulting in a negative resistance effect. The voltage and current at the collector terminal can then be adjusted using a variable resistor.
Benefits of 2N4401_J05Z
2N4401_J05Z is a cost-effective solution for a variety of applications. It has a very low noise level, is reliable and has an excellent temperature range. It is also highly versatile and has a wide range of application areas. The device is widely available and can be easily integrated into a wide range of circuits. In addition, 2N4401_J05Z has a high switching speed, making it ideal for digital and high-frequency applications.
Conclusion
2N4401_J05Z is a highly versatile transistor that can be used for a wide range of applications. Its internal design enables it to switch current/voltage signals quickly and with low noise. It is also reliable, cost-effective and widely available. 2N4401_J05Z is a great choice for digital, analog and mixed signal applications.
The specific data is subject to PDF, and the above content is for reference
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