Allicdata Part #: | 2N4403RLRAOSCT-ND |
Manufacturer Part#: |
2N4403RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.6A TO92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625m... |
DataSheet: | 2N4403RLRA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4403 |
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2N4403RLRA Application Field and Working Principle
The 2N4403RLRA is a single transistor of the type Bipolar Junction Transistor (BJT). It is generally used in low power amplifier and oscillator circuits, as well as in switching circuits. The transistor has been used in a wide range of applications in the past, but is now more commonly used in more modern fields such as robotics, electronics and microelectronics.
Features and Specifications
The 2N4403RLRA features an NPN type of BJT. It has an emitter-base voltage of 5V, a collector-emitter voltage of 40V and a total maximum power dissipation of 500mW. It has a current gain of 30 and a collector-base capacitance of 2.5pF. Additionally, it can be operated at temperatures ranging from -55°C to +150°C.
Working Principle of 2N4403RLRA
The 2N4403RLRA works based on the working principles of a typical BJT. This includes current amplification and voltage change. The transistor has three main terminals – the base, the collector and the emitter. The base is responsible for controlling the electric current flowing through it, with the collector collecting the electric current and the emitter emitting it. It works by applying current to the base terminal, where it is then amplified and ultimately passed through to either the collector or the emitter.
When the base is connected to a positive voltage, it allows the electric charge to pass from the collector to the emitter. Conversely, when the base is connected to a negative voltage, it prevents the electric charge from flowing from the collector to the emitter – this is known as the cutoff mode. This allows the transistor to act as an electric switch, allowing one electric signal to be switched off and another electric signal to be switched on.
Applications of 2N4403RLRA
The 2N4403RLRA transistor is commonly used in low power amplifier and oscillator circuits. It is also used in switching circuits, allowing for the switching of one electric signal and the switching on of another. Additionally, it has been used in robotics, electronics and microelectronics in the past, but with the advent of more modern components, its usage has decreased.
This transistor can be used in a wide range of applications and is relatively cheap when compared to other transistors. It can be used to amplify weak electrical signals, such as those produced by sensors, and can also be used to switch electrical signals or for voltage regulation. Additionally, it can be used to create oscillators and for switching operations.
Conclusion
The 2N4403RLRA is a single transistor of the Bipolar Junction Transistor (BJT) type. It has a wide range of applications, including low power amplifier and oscillator circuits, switching circuits, robotics and electronics. It has a current gain of 30 and a total maximum power dissipation of 500mW. It works based on the working principles of a typical BJT and can be used to amplify weak electrical signals, switch electrical signals and for voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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