Allicdata Part #: | 2N4401_J25Z-ND |
Manufacturer Part#: |
2N4401_J25Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625m... |
DataSheet: | 2N4401_J25Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4401 |
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The 2N4401_J25Z transistor is a type of bipolar junction transistor (BJT). It is a single semiconductor component made up of a pair of p-type and n-type materials that are combined together. This type of transistor can be used in electronic applications such as amplifiers and switches, and it is one of the most popular transistors available on the market today.
The 2N4401_J25Z transistor is usually used in applications that require switching, amplifying, and active current gain. It consists of three connections, known as the Emitter, Base, and Collector. The Base connection is where current can be applied to the transistor, and it is the most important connection since it controls the output of the device. The other two connections, the Emitter and the Collector, are used for controlling various parameters, such as voltage and current.
When a current source is applied to the Base terminal of the 2N4401_J25Z transistor, it causes the current to flow from the Base to the Collector. This causes a voltage to be created at the Collector terminal and the resulting current flow causes a gain in current across the device. This gain is known as the current transfer ratio or the current gain of the transistor.
This current flow through the transistor also causes a voltage drop across its terminals, known as the Collector-Emitter Voltage (Vce). The Vce is an important factor in determining the performance of the transistor, and it is usually used to determine the maximum voltage that can be applied to the device.
In addition to these parameters, the 2N4401_J25Z transistor also has several other characteristics that make it useful in a variety of applications. These characteristics include its low power consumption, low noise level, and high speed. Its high frequency response also makes it well-suited for use as an amplifier as well as a switch in various types of circuits.
So what are the application fields and working principles of the 2N4401_J25Z transistor? As mentioned earlier, this type of transistor is used in a variety of electronic applications, including amplifiers, switches, and active current gain. In addition, it can also be used as an oscillator in many types of circuits, as well as for voltage stabilization and regulation.
The working principles of the 2N4401_J25Z transistor involve the application of a current source to the Base connection, which causes current to flow through the transistor to the Collector. The resulting current causes a voltage drop across the terminals, which can then be used to control various parameters in the device.
In conclusion, the 2N4401_J25Z transistor is a type of bipolar junction transistor (BJT) that is typically used in electronic applications such as amplifiers, switches, and active current gain. It is a single semiconductor component made up of a pair of p-type and n-type materials that are combined together, and its working principles involve the application of a current source to the Base connection. This causes current to flow through the transistor to the Collector, creating a voltage drop across the terminals and allowing users to control various parameters in the device.
The specific data is subject to PDF, and the above content is for reference
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