| Allicdata Part #: | 2N4401RLRMG-ND |
| Manufacturer Part#: |
2N4401RLRMG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 40V 0.6A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625m... |
| DataSheet: |  2N4401RLRMG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | -- |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
| Power - Max: | 625mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | 2N4401 |
Description
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2N4401RLRMG is a NPN bipolar junction transistor (BJT). It is amongst the most commonly used transistors for smaller electronic projects and comes with a pre-attached heat sink. This transistor has a low collector to emitter saturation voltage (VCE(sat)) and low leakage current. It can used to switch, amplify and saturate the voltage in the circuit. The 2N4401RLRMG is called a single transistor because it consists of three terminals – the Emitter, Base, and Collector. These are connected to a silicon chip which is embedded between substrates.The application field of the 2N4401RLRMG covers any circuit which requires switching, amplification or saturation of voltage between the emitter and collector electrodes. This transistor can be utilized for many various purposes, including, but not limited to: Audio amplifiers, Radio Frequency (RF) amplifiers, Power supply application, Microprocessor circuits, and Digital Switching. Some applications that use the 2N4401RLRMG are: RF power amplifiers, cellular phone base station amplifier, voice and vision signal mixers, wired communication devices, robotic control and memory reset devices.
The working principle of the 2N4401RLRMG is based on the theory of PN junction and transistor biasing. When a certain amount of current is applied to the base electrode, a current of equal magnitude will be created between the emitter and collector electrodes. This is due to the PN junction diode’s characteristics that dictate the flow of current to happen only in one direction. By controlling the amount of current flowing through the base electrode, one can regulate the emitter-collector current. This is why transistors are known as bipolar switching devices.
The 2N4401RLRMG offers several advantages over other transistors. Firstly, it has very good current gains and can control high voltage levels. Secondly, it has very low noise, low power consumption and excellent thermal stability. Finally, it has a wide range of temperature operation, a high gain-bandwidth product, and low capacitance for improved high frequency performance. All of these features make the 2N4401RLRMG an ideal choice for a wide range of high performance applications.
In conclusion, 2N4401RLRMG is a single transistor used for a wide range of high performance applications due to its low noise, low power consumption, excellent thermal stability and wide temperature operating range. It is used for audio amplifiers, RF amplifiers, power supply applications, and digital switching. Its working principle is based on the theory of PN junction and transistor biasing.
The specific data is subject to PDF, and the above content is for reference
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