Allicdata Part #: | 2N4403GOS-ND |
Manufacturer Part#: |
2N4403G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625m... |
DataSheet: | 2N4403G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4403 |
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.The 2N4403G is a silicon PNP, bipolar junction transistor (BJT) known for its low noise and high gain, making it ideal for use in a wide range of applications. Its high transconductance properties also make it a favorite among audiophiles and radio enthusiasts.
The 2N4403G is ideal for use as a low-noise preamp, low-noise amplifier, electronic switch, and as a low-noise mixer stage. Its also commonly used in audio applications such as tone controls, as well as analog and digital circuits. The 2N4403G is capable of withstanding voltages up to 25V and can handle currents up to 500mA.
The 2N4403G is a PNP device which means the collector is connected to the base. A positive voltage applied to the base causes current to flow from the collector to the emitter. This process is known as forward bias. When the base voltage is reversed and a negative voltage is applied, current no longer flows even though there is a path. This is known as reverse bias.
The 2N4403G has a high gain and low noise levels due to its high β and low Rπ. The β is defined as the ratio of the collector current to the emitter current, while the Rπ is defined as the ratio of the collector-emitter resistance to the base-emitter resistance. The higher the β and the lower the Rπ, the more efficient the BJT is.
The 2N4403G also has a high frequency capabilities due to its low capacitances. The capacitances are considerably lower than other transistors in the same domain, which means the 2N4403G can work without significant distortion. The maximum frequency which the 2N4403G can work is dependent on the application.
Due to its robustness, low noise, and high frequency capabilities, the 2N4403G is one of the most versatile transistors on the market. It can be used in a variety of applications, from low-noise preamps to high-frequency oscillators. Its high transconductance properties make it a favorite among audiophiles and radio enthusiasts. It is also widely used in analog and digital circuits, as well as in audio applications such as tone controls.
The specific data is subject to PDF, and the above content is for reference
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