2N4402TF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 150mA, 2V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N4402

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Introduction

The 2N4402TF is a common N-Channel field effect transistor (FET) that is generally used in power and signal switching applications. It is a single junction FET and a relatively small on-state current rating but can provide a good deal of power gain at high frequencies. The 2N4402TF has a low leakage current and a low gate to source voltage that makes it suitable for power conservation in circuits. This article will discuss the application field of the 2N4402TF, as well as its working principle and general technical details.

Application Field

The 2N4402TF is most commonly used in power and signal switching applications, such as high-frequency switching, low-level signal sensing and current sensing. It is also used in boost converters, rectifiers, voltage regulators, motor speed controllers and D/A (Digital to Analog) converters. Its ability to handle high frequency switching and its ability to control power consumption make it suitable for these applications.

Working Principle

The 2N4402TF works on the principle of “Depletion Mode” operation. This means that the device acts like a diode and the current flows between the source and the drain when there is an applied voltage, regardless of the value of the gate voltage. The device only turns off when the gate voltage applied is positive enough to induce what is known as a “depletion region” and close the channel.In “Depletion Mode” operation, the gate voltage needed to turn the device off is known as the “Cutoff Voltage” and is usually found in the device’s data sheet.

General Technical Specifications

The 2N4402TF is a single junction FET and is rated at 30 volts and 1 amp. It is a N-Channel device with a low on-state resistance and a low gate-source voltage of 4.5V. It has an even lower leakage current when compared to other FETs making it suitable for power conservation in circuits. The drain to source breakdown voltage is specified at 55 volts and the gate to source breakdown voltage at 5 volts. The switching times for the 2N4402TF are also relatively low being in the range of 2-4 nanoseconds turn-on and 4 to 11 nanoseconds turn-off.

Conclusion

The 2N4402TF is a common N-Channel FET and is suitable for applications in power and signal switching. Its working principle is based on depletion mode and its low on-state resistance and gate-source voltage make it suitable for power conservation. Its switching times are also relatively low and its leakage current is lower than other FETs. Therefore, it is an ideal device for applications that require power and signal switching.

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