Allicdata Part #: | 2N4403RLRMG-ND |
Manufacturer Part#: |
2N4403RLRMG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625m... |
DataSheet: | 2N4403RLRMG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4403 |
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2N4403RLRMG is a type of transistor known as a bipolar junction transistor (BJT). It is a single type of transistor and is often used to amplify current. In order to understand the application field and working principle of 2N4403RLRMG, one must first understand the uses of BJTs in general. BJTs are widely used for various purposes including amplifying low frequency signals and powering small devices. These transistors are also commonly used in logic gates and switching circuits.
In terms of their practical application, BJTs can be used for various purposes depending on their configuration. They can be used for amplifying small signals for AC purposes, for DC linear amplifiers, and for logic gates. These transistors are also utilized for switching applications, such as controlling the flow of current through a circuit. Moreover, BJTs are also commonly used in analog-to-digital converters, instrumentation amplifiers, and power switches.
2N4403RLRMG is a type of BJT that is mainly used in amplifying applications. It has three terminals: the emitter (E), the base (B), and the collector (C). Current applied to the base is amplified by the transistor and appears at the collector. The current entering the emitter must always be greater than the current entering the collector. This ensures that the transistor amplifies the current correctly. The output current is determined by the amplification factor, which is usually mentioned on the transistor itself.
In terms of its working principle, a BJT is mainly composed of two p-type and one n-type semiconductor regions, arranged in a sandwich structure. When a small current is applied to the base, electrons bombard the collector region and these electrons are collected in the collector. At the same time, some of the electrons coming from the emitter are attracted to the base, creating a hole. The combination of these processes is how the transistor amplifies current.
2N4403RLRMG can be used for various purposes, depending on one’s application. For example, it can be used in amplifying AC and DC signals, for switching and logic applications, and for powering small devices. This type of transistor is robust and reliable, and it can help make electrical circuits more efficient and reliable. Furthermore, its easy-to-understand working principle makes it easier for users to use it for various applications.
In conclusion, 2N4403RLRMG is a type of BJT transistor. Its application field is wide and its working principle is easy to understand. This type of transistor is used for amplifying AC and DC signals, for logic applications, and for powering small devices. It is robust and reliable, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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