2N4402BU Discrete Semiconductor Products

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Bipolar transistors are electronic components used to control the flow of electric current between two terminals. The 2N4402BU is a type of single-gate bipolar junction transistor (BJT) specifically designed to perform tasks in demanding applications where high-current gain performance is required. This article will discuss the application field and working principle of the 2N4402BU.

Features of 2N4402BU

The 2N4402BU has a current gain of 250 max, suitable for digital and analog circuits. Its collector voltage is guaranteed up to a max of 60V, offering superior protection against accidental contact or overdriving. The 2N4402BU also has a low collector-emitter saturation voltage (Vce(sat)), typically 0.8V, which allows for efficient circuit design as it reduces energy losses when the transistor is ON. As with all bipolar junction transistors, the 2N4402BU is also highly reliable due to its robust construction.

Application Fields

The 2N4402BU is a popular choice for many applications in areas such as power electronics and telecommunications. In power electronics, it is used as a switching element in high-power converters and in circuits that require current gain and low losses. In telecommunications, it is used as an amplifier in radio broadcast, satellite and cellular communication systems.

The 2N4402BU is also used in the control of various automated systems and robotics. Its low saturation voltage and high current gain make it ideal for motor control systems, spindle motor drives, and other industrial equipment. It is also used in audio systems, industrial computers and other consumer electronics.

Working Principle

The 2N4402BU is a three-terminal, NPN-type single-gate bipolar junction transistor (BJT). The three terminals, labeled Base (B), Collector (C) and Emitter (E), are connected to an external circuit for control. The BJT has a high gain of current between the collector and the emitter terminal and a low resistance between the emitter and the base terminal, allowing it to act as a switch.

The BJT is based on the principle of current flow along a semiconductor material, in the form of electrons and holes. When voltage is applied across the terminals, electrons flow from the emitter to the base, creating a current between the collector and the emitter. This current is regulated by the applied voltages, allowing the transistor to act as a switch or an amplifier.

The gain of current between the collector and the emitter is dependent on the ratio of collector current to base current (Ic/Ib), which is determined by the transistor’s construction. The 2N4402BU has a minimum beta (Ic/Ib) of 250, making it suitable for applications demanding high current gain. The high current gain allows for efficient control of motor speeds, for example, by enabling a small voltage signal to control larger currents.

In summary, the 2N4402BU is a popular single-gate BJT designed for applications requiring high current gain and low saturation voltages. It is used in power electronics, telecommunications, automation systems, robotics and consumer electronics. Its operation is based on the principle of current flow along a semiconductor material and it is regulated by the ratio of collector current to base current.

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