2N4401BU Allicdata Electronics
Allicdata Part #:

2N4401-ND

Manufacturer Part#:

2N4401BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625m...
DataSheet: 2N4401BU datasheet2N4401BU Datasheet/PDF
Quantity: 78725
Stock 78725Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N4401
Description

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The 2N4401BU is a low-noise voltage-controlled transistor that is categorized under Bipolar (BJT) - Single transistors. It is often used to amplify signals in radio frequency applications, and can be used in both analog and digital settings. The transistor is a three-terminal device, consisting of a Base, Collector, and Emitter. It works by controlling the flow of current between the collector and the emitter with a small electric current at the base. This small electric current is referred to as the base current.

The base current is amplified many times to provide an amplified output current. The base current is usually small, and the amount it can be increased is proportional to the amount of current applied at the collector. This results in the output current being larger than the input current. It is this increase in current that makes the 2N4401BU an effective transistor in radio frequency applications.

Applications for the 2N4401BU include radio frequency amplifiers, signal transceivers, and low-noise amplifiers. It is often used in applications that require high frequency gain and low noise. For example, it can be used in audio amplifiers, radio receivers, and even cell phones. The 2N4401BU is also suitable for high speed digital logic circuits, as it has a very low gate switching time.

The transistor operates in the linear region of its transfer characteristics at low current levels, whereas it operates in the saturated region at higher current levels. This means that its operation is sensitive to base current. The current gain of the 2N4401BU is typically in the range of β = 150-250, which is relatively high as compared to other transistors. This makes the transistor ideal for high-frequency amplification.

The main features of the 2N4401BU include excellent gain-bandwidth product, low noise, good static current gain (hfe), low collector-emitter saturation voltage (Vce(sat)), and low collector-base saturation voltage (Vce(sat)). The transistor is also highly reliable, with a high maximum temperature rating of 175°C. It is also compatible with lead-free solders.

Overall, the 2N4401BU is an excellent bipolar junction transistor for a wide range of low-frequency and high-frequency analog and digital applications. Its high current gain, low noise, and excellent static current gain make it ideal for RF applications where high frequency gain and low noise is desired. Its compatibility with lead-free solder and high temperature rating also make it a great choice for high-temperature applications.

The specific data is subject to PDF, and the above content is for reference

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