2N4403_J60Z Allicdata Electronics
Allicdata Part #:

2N4403_J60Z-ND

Manufacturer Part#:

2N4403_J60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625m...
DataSheet: 2N4403_J60Z datasheet2N4403_J60Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N4403
Description

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The 2N4403_J60Z is a discrete, Single Bipolar (BJT) transistor component. It is used for basic switching and amplification. It is commonly used in applications such as digital circuits, linear amplifiers, and audio amplifiers. In this article, we will discuss the application field and working principle of the 2N4403_J60Z transistor.

The 2N4403_J60Z transistor is a NPN type component, with a transition frequency (fT) of up to 300MHz. It has a collector-emitter voltage (VCE) of 40V and a collector-emitter current (IC) of 625mA. Its base-emitter voltage (VBE) is 0.5V and its maximum power dissipation (PD) is 4W. It has a transition frequency (fT) of up to 300MHz, making it ideal for a wide range of high frequency applications.

The 2N4403_J60Z transistor is a very versatile device, and is used in a wide variety of applications. It is commonly used in digital circuits, such as sine wave generators, logic gate drivers, and pulse width modulators. It can also be used in linear amplifiers, audio amplifiers, and power switching circuits. It is an ideal solution for powering LED lights and other low power devices. Furthermore, it can be used in RF systems, for amplifying high frequency signals.

The 2N4403_J60Z transistor has a very simple working principle. When a voltage is applied to the base terminal, it allows current to flow from the collector to the emitter. This is called an ON state. When the voltage is taken away from the base terminal, the transistor switches to OFF state, and the current flows in the opposite direction.

The relation between the base current (IB) and the collector current (IC) is given by the transistor\'s current gain ratio, which is denoted by the symbol beta (β). This factor is very important in determining the performance of the transistor. The current gain ratio is used to calculate the amount of current flowing through the collector terminal when a certain current flows through the base terminal.

The 2N4403_J60Z transistor is a very popular and versatile component. Its wide application field and simple working principle makes it a great choice for a variety of projects and applications. Furthermore, its low cost makes it an ideal solution for smaller projects. With its high frequency capabilities, the 2N4403_J60Z is well suited for use in high frequency applications such as RF systems.

The specific data is subject to PDF, and the above content is for reference

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