Allicdata Part #: | 2N4403_S00Z-ND |
Manufacturer Part#: |
2N4403_S00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625m... |
DataSheet: | 2N4403_S00Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4403 |
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2N4403_S00Z Application Field and Working Principle
2N4403_S00Z is a single bipolar junction transistor (BJT) that is widely used in many electronic devices. It is a general-purpose, low-power, NPN transistor which is frequently used in applications such as general-purpose switching and amplification. In addition to its low voltage and low current requirements, the 2N4403_S00Z also features low noise capability and fast response. It is also capable of being used in a wide range of temperatures.
The 2N4403_S00Z is designed with a power dissipation of 500mW and a maximum collector current of 400mA. This makes it ideal for a variety of applications, from low-power audio amplifiers to high-voltage electric motors. Its low voltage and low current requirements also make this transistor well suited for many consumer electronic devices.
The 2N4403_S00Z is an NPN junction transistor, which means it has three terminals - the emitter, the collector and the base. The emitter is the negative connection, the collector is the positive connection, and the base is the connection for biasing the transistor into operation. The 2N4403_S00Z also has two secondary connections that are used to adjust the gate voltage and the reverse bias of the EMFT, respectively.
In operation, the 2N4403_S00Z relies on the flow of electrons between the collector and the emitter. When a positive bias voltage is applied to the base of the transistor, the electrons will flow from the collector to the emitter. This causes the current flowing from the collector to the emitter to increase, allowing the transistor to amplify the current. Conversely, when the base-emitter voltage is reduced, the current flowing from the collector to the emitter decreases, allowing the transistor to act as a switch.
The 2N4403_S00Z is an extremely versatile transistor and is often used in small-signal switching and amplification applications. It is also used in switching power supplies and amplifier stages, as it is capable of efficiently controlling and modulating currents. Additionally, it is often used in radio frequency (RF) circuits, as its high frequency response makes it well suited for use in such devices.
In summary, the 2N4403_S00Z is a low-power, NPN bipolar junction transistor that is widely used for general-purpose switching and amplification purposes. It is designed with a low voltage and low current requirement and is capable of operating over a wide range of temperatures. It is also able to efficiently control and modulate currents in small-signal switching and amplification applications. Additionally, its high frequency response makes it ideal for use in RF circuits.
The specific data is subject to PDF, and the above content is for reference
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