Allicdata Part #: | 2N5134-ND |
Manufacturer Part#: |
2N5134 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANSISTOR NPN TO-106 |
More Detail: | Bipolar (BJT) Transistor NPN 10V 250MHz Through ... |
DataSheet: | 2N5134 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 400nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 1V |
Frequency - Transition: | 250MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-106-3 Domed |
Supplier Device Package: | TO-106 |
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The 2N5134 is a popular single-transistor field-effect transistor (FET) used in analog electronic circuits. The device is designed for use in a variety of applications including instrumentation systems, as well as medical and industrial equipment.
The 2N5134 is a so-called “field-effect transistor” because its operation relies heavily on the electrical field surrounding the transistor’s channel region. This field determines the behaviour of the transistor and its current flow. This works in a similar fashion to a bipolar transistor, with the addition of the electric field.
The 2N5134 has what is known as an enhancement-type FET, meaning that its current flow increases with the application of an electric field. This characteristic makes the 2N5134 an excellent choice for many electronic devices.
The 2N5134 is typically used in linear circuits where a high bandwidth and low noise operation are required. As an example, the device can be successfully used as an amplifier for audio signals or as a driver for large motors. Other applications include digital logic circuits, amplifiers for low-level signals and buzzers for alarms.
When it comes to the 2N5134’s working principle, this transistor works by a process known as “channel modulation”. This is where the electric field of the transistor’s channel region affects the current flow. This effect is used to control the gain of the device.
The 2N5134’s working principle can be broken down into three basic parts. Firstly, an electric field is applied to the channel region of the transistor. This creates a “depletion region" where the electrons are less readily available due to the presence of an electric field.
Secondly, the electrons in the transistor’s channel region are modulated in accordance with the applied voltage. These changes create a variation in the current flow, which controls the gain of the 2N5134.
Finally, current can freely flow through the device when a “gate voltage” is applied in order to turn the transistor “on”. This voltage can be adjusted to control the amount of current that is able to flow through the transistor, which in turn determines its gain.
In summary, the 2N5134 is a single-transistor field-effect transistor that is commonly used in a variety of applications. The transistor’s operation is based on the principle of channel modulation, whereby the current flow is controlled by the electric field in the transistor’s channel region. The current flow can be adjusted by varying the gate voltage, allowing the device to be configured for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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