2N5191 Allicdata Electronics
Allicdata Part #:

497-2601-5-ND

Manufacturer Part#:

2N5191

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 60V 4A SOT-32
More Detail: Bipolar (BJT) Transistor NPN 60V 4A 2MHz 40W Throu...
DataSheet: 2N5191 datasheet2N5191 Datasheet/PDF
Quantity: 2906
Stock 2906Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Power - Max: 40W
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3
Base Part Number: 2N5191
Description

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The 2N5191 is a commonly used transistor known as a NPN transistor. Such transistors are Bipolar Junction Transistors (BJT) and are used in many electronics applications. This particular transistor has three pins, known as the collector, base and emitter terminals.

In technology, NPN transistors are often used as amplifying devices. Its different application fields include small-signal and audio-frequency (AF) amplifiers, switching circuits and digital logic gates. This transistor, along with other common transistors such as the 2N4124 and 2N4125, are mainly used for amplifying and switching small signals.

In a circuit, the base pin acts as the control input like a signal resulting in current flow between the collector and emitter pins. The amount of current flowing between the collector and emitter is proportional to the signal going into the base, thus allowing the 2N5191 to act as an amplifying device. In addition, this transistor also has a wide transition frequency range which allows it to be used in a variety of AF applications as well as high-speed logic gates and switching circuits.

As with most transistors, the 2N5191 has a collector-emitter saturated current (ICE) of 500mA and a maximum collector-emitter voltage (VCE) of 50V. This allows the transistor to operate with higher currents and higher voltages than other transistors. Furthermore, the 2N5191 has a maximum breakdown voltage (VCEO) of 250V and maximum power dissipation of 625mW, which makes it ideal for use in many power applications.

In order to understand the working principle of the 2N5191, one must understand the theory of BJTs. A BJT is a three-terminal device composed of two P-type and one N-type semiconductor materials. In a NPN transistor such as the 2N5191, the collector is usually attached to the N-type layer whereas the base is connected to the P-type layer. The P-type layer controls the current flow between the collector and emitter.

When a voltage is applied at the base pin of a NPN transistor such as the 2N5191, the voltage at the base-emitter junction is either forward biased or reverse biased. If the applied voltage is higher than the base-emitter voltage, current will flow from the emitter to the collector. Thus, the applied base voltage is amplified, resulting in current between the collector and emitter pins.

Aside from the transistor\'s current and voltage ratings, its switching speed is also an important parameter. The 2N5191 has a transition frequency (ft) of 160MHz which is much higher than its other NPN counterparts. This makes it a suitable choice for many applications in which low frequency transistors are not feasible.

In conclusion, the 2N5191 is a commonly used transistor which is primarily used for amplifying and switching small signals. Its wide transition frequency range and its maximum ratings make it an ideal choice for many applications. In addition, its current and voltage ratings make it suitable for use in high-power applications. Thanks to its versatile set of features and capabilities, the 2N5191 is one of the most frequently used transistors in modern electronics.

The specific data is subject to PDF, and the above content is for reference

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