2N5116 Discrete Semiconductor Products |
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Allicdata Part #: | 2N5116CS-ND |
Manufacturer Part#: |
2N5116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | JFET P-CH 30V 0.5W TO18 |
More Detail: | JFET P-Channel 30V 500mW Through Hole TO-18 |
DataSheet: | 2N5116 Datasheet/PDF |
Quantity: | 1667 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 15V |
Resistance - RDS(On): | 150 Ohms |
Power - Max: | 500mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
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2N5116 Application Field and Working Principle
The 2N5116 is a type of field-effect transistor (FET) that falls into the category of junction field-effect transistors (JFETs). It is generally used as an amplifying device and is found in many commercial and industrial electronics applications. It has also been used in robotics as a motor or servo controller or as a sensing element to detect electric current in a system. The 2N5116 is available in dip, through-hole, and other small packages.
Structure
A JFET is made up of two semiconducting materials, a source and a drain. An electrical current created by an applied electric field flows through two channels between the source and the drain. The source and drain are the terminals at the end of the channels, and are used to control the gate current. The gate is a terminal located between the source and the drain, and creates the electric field that controls the flow of current between the source and the drain. The gate current is typically very small and is used to activate the device and regulate the flow of current.
Working Principle
The working principle of the 2N5116 is based on the P-N junction theory. A P-N junction is a diode made up of two semiconductor layers, a P-type layer of semiconductor and an N-type layer of semiconductor. When an external potential is applied across the P-N junction, current flows from the N-type material to the P-type material, allowing electrons to flow through the device. This creates an electric field across the P-N junction, which controls the flow of current between the source and the drain of the device. The electric field is regulated by the gate voltage.
In the case of the 2N5116, a small amount of electric current flows through the gate terminal and regulates the electric field across the P-N junction. The gate voltage creates a depletion layer in the channel between the source and the drain, which alters the electric field and effectively controls the flow of current between the source and the drain. The gate voltage can be adjusted to increase or decrease the amount of current flowing through the 2N5116.
Applications
The 2N5116 is primarily used as an amplifying device. It can be found in many commercial and industrial electronics applications, such as signal processing, audio systems, and power supplies. It can also be used as a motor or servo controller, or as a sensing element to detect electric current in a system. Additionally, the 2N5116 is available in a variety of sizes and is ideal for use in tight spaces. It is also a reliable and cost-effective solution for many electronics applications.
Conclusion
The 2N5116 is a type of field-effect transistor (FET) made up of two semiconducting materials. It is generally used as an amplifying device and is found in many commercial and industrial electronics applications. Its working principle is based on the P-N junction theory, where a small amount of electric current flows through the gate terminal, creating an electric field which controls the flow of current between the source and the drain of the device. The 2N5116 is available in a variety of sizes and is a reliable and cost-effective solution for many electronics applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2N5195 | STMicroelect... | -- | 1000 | TRANS PNP 80V 4A SOT-32Bi... |
2N5192 SL H | Central Semi... | 0.0 $ | 1000 | TRANS NPN 80V 4A TO126Bip... |
2N5195 SL H | Central Semi... | 0.0 $ | 1000 | TRANS PNP 80V 4A TO126Bip... |
2N5192R | Central Semi... | 0.0 $ | 1000 | TRANS NPN 80V 4A TO126Bip... |
2N5193 | Central Semi... | 0.0 $ | 1000 | TRANS PNP 40V 4A TO126Bip... |
2N5194 | Central Semi... | 0.0 $ | 1000 | TRANS PNP 60V 4A TO126Bip... |
2N5134 | Central Semi... | -- | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5139 | Central Semi... | 0.0 $ | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5143 | Central Semi... | 0.0 $ | 1000 | TRANSISTOR NPN TO-106Bipo... |
2N5116 | Central Semi... | -- | 1667 | JFET P-CH 30V 0.5W TO18JF... |
2N5190 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 40V 4A TO-225AA... |
2N5172_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5194G | ON Semicondu... | -- | 1000 | TRANS PNP 60V 4A TO225AAB... |
2N5172_D27Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5172_D74Z | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 0.5A TO-92B... |
2N5192 | STMicroelect... | -- | 822 | TRANS NPN 80V 4A SOT-32Bi... |
2N5191 | STMicroelect... | -- | 2906 | TRANS NPN 60V 4A SOT-32Bi... |
2N5114 | Microsemi Co... | -- | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5115 | Microsemi Co... | -- | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5115UB | Microsemi Co... | 35.78 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5116JTX02 | Vishay Silic... | 54.35 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTXL02 | Vishay Silic... | 59.3 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTVL02 | Vishay Silic... | 78.9 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5114-E3 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTVL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5114JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-206AAJFE... |
2N5115-E3 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTVL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTX02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTXL02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5115JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116-E3 | Vishay Silic... | -- | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JAN02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5116JTXV02 | Vishay Silic... | 0.0 $ | 1000 | JFET P-CH 30V TO-18JFET ... |
2N5114UB | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
2N5116UB | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL JFETJFET P-Chan... |
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