Allicdata Part #: | 2N5193-ND |
Manufacturer Part#: |
2N5193 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP 40V 4A TO126 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 4A 2MHz 40W Throu... |
DataSheet: | 2N5193 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 1A, 4A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1.5A, 2V |
Power - Max: | 40W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
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The 2N5193 is a high voltage bipolar transistors (BJT) which is designed for use in general purpose switching and amplification applications. It has an epitaxial collector structure and a higher breakdown voltage than other comparative BJTs. The 2N5193 has an active base width otherwise known as the active base region which ensures higher current gains and better device saturation and still maintains a long-term stability if properly used.
The 2N5193 is a single transistor, more specifically it is an NPN transistor, with a maximum voltage rating of 650 V, maximum collector-emitter voltage of 600 V, maximum collector power dissipation of 1.5 W and maximum collector-base voltage of 600 V. These specifications allow the 2N5193 to be used in high-power applications and switching applications, which are normally found in industrial, automotive and general purpose applications.
The working principle behind the 2N5193 is the same as with all other NPN BJTs – by controlling the base current, the collector current is either increased or decreased, between a low saturation current (Icsat) and a high current gain (Hfe). This principle allows the 2N5193 to be used in applications such as power switching, amplification and as a variable resistance.
The 2N5193 can be used in such varied applications due to its wide operating temperature range of -55oC to +150oC, high breakdown voltage and high current gains. It also has a wide range of terminal and lead configurations. These features make the 2N5193 suitable for a broad array of applications such as:
- Power switching
- Relay drivers
- Motor speed control circuits
- Light-dimmer circuits
- General-purpose amplification
- Audio amplifiers
- TV converters
- Regulated power supplies
- Control circuitry
- DC-DC converters
- Road-lighting Equipment
- Power amplifiers
The collector-emitter saturation voltage of the 2N5193 is relatively low, which makes it ideal for direct switching applications such as power LED lights and simple logic circuits. It is also able to withstand high voltage and high current spikes, making it suitable for applications such as motor speed control circuits and relay driver circuits.
The 2N5193 is typically packaged in an encapsulated package, with leads normally used to connect it to the circuit board. The leads are typically arranged in either a TO-220 package or a TO-251 package, but other configurations are available. The package should be chosen depending on the application and the circuit board. For example, a TO-251 package might be suitable for surface mount applications, while a TO-220 package might be more suitable for through-hole applications.
The 2N5193 is a simple and cost-effective component whose versatile nature makes it a suitable choice for a broad spectrum of applications. It is simple to use and has stable performance characteristics over time. The 2N5193 is an efficient component, whose versatile uses have made it a popular choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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