2N5116UB Allicdata Electronics
Allicdata Part #:

2N5116UB-ND

Manufacturer Part#:

2N5116UB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: P CHANNEL JFET
More Detail: JFET P-Channel 30V 500mW Surface Mount UB
DataSheet: 2N5116UB datasheet2N5116UB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5116UB is a junction field-effect transistors (JFETs) used in both analog and digital circuits. It has high input impedance, fast switching rate, small size, and low cost, making it especially suitable for various applications.

In modern designs, JFETs are used in a variety of fields such as audio, communication, instrumentation and control. They can be found in amplifiers, power supplies, and switching circuits. JFETs are also used in sensing circuits, where they can detect electrical signals. JFETs are often used as programmable current sources or switches due to their overall low cost and simple, low-maintenance design.

The 2N5116UB’s main characteristics are its high input impedance, which enables it to function as a voltage booster, and its fast switching rate, which reduces the power needed for operation. This makes the 2N5116UB especially suitable for use in AC/DC drives, where a fast switching rate is desirable. Additionally, its small size makes the 2N5116UB suitable for use in close proximity to other components in a circuit.

The 2N5116UB’s working principle is based on the PN junction, which develops a depletion region in the presence of bias voltage. This depletion region acts as a barrier to current flow. When a voltage is applied to the gate, it creates a negative charge in the gate, meaning that the current flowing between the drain and the source is reduced, thus changing the impedance of the transistor. The exact value of the impedance is determined by the bias voltage applied to the gate.

The 2N5116UB is a popular JFET that is used in a wide range of applications due to its high input impedance and fast switching rate. It can be used as a voltage booster and is also suitable for close proximity applications due to its small size. The 2N5116UB is an easy to use and cost-effective solution that makes it an attractive option to consider when selecting the best JFET for a given requirement.

The specific data is subject to PDF, and the above content is for reference

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