Allicdata Part #: | 2N5114JAN02-ND |
Manufacturer Part#: |
2N5114JAN02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET P-CH 30V TO-206AA |
More Detail: | JFET Through Hole TO-206AA (TO-18) |
DataSheet: | 2N5114JAN02 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-206AA (TO-18) |
Description
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Transistors - JFETs:
The 2N5114JAN02 is a JFET (Junction Field Effect Transistor) which is mainly used for high-precision applications such as current sources, switches, and amplifiers. It was designed to provide Switching and Low-Noise Signal Processing.Application field:
2N5114JAN02 is mainly applied in the fields of impedance matching, test instrumentation, and radio frequency circuits. It is especially commonly used in automated test equipment and medical devices. The 2N5114JAN02 JFET\'s high input impedance and low noise voltage of 1.5 to 5.5Vpp make it ideal for these applications. It has excellent linearity and low distortion as well, making it suitable for designing high-precision amplifiers.The 2N5114JAN02 JFET can also be used for many analog uses, such as providing overload protection for analog circuits, making it possible to block and redirect high current flows safely. It is also often used as a temperature control element, as its low noise voltage and high input impedance makes it suitable for this purpose.Working Principle:
The 2N5114JAN02 JFET works on the principle that when a voltage is applied to the gate electrode, the surface electric field of the channel will be changed and the two-dimensional energy band of the surface will be modulated.The surface electric field of the channel will increase or decrease with the application of voltage, causing the energy band structure of the two-dimensional surface to be weakened or strengthened. This change in energy band will affect the charge carriers in the channel and cause the current in the channel to increase or decrease.This change in current is then available as instrumentation output in various forms. Thus, the JFET can be used as a current or voltage switching device or as an amplifier. In the case of 2N5114JAN02, it can be used as a voltage or current source, or as a switch.Conclusion:
The 2N5114JAN02 JFET is typically used for high-precision applications due to its low noise, high input impedance and excellent linearity. It is often used in automated test equipment and medical devices, as well as analog circuits, temperature control elements and overload protection. The 2N5114JAN02 works on the principle that when a voltage is applied to the gate electrode, the surface electric field of the channel will be changed and the two-dimensional energy band of the surface will be altered, which can be used to either increase or decrease the current in the channel.The specific data is subject to PDF, and the above content is for reference
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