Allicdata Part #: | 2N5114UB-ND |
Manufacturer Part#: |
2N5114UB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | P CHANNEL JFET |
More Detail: | JFET P-Channel 30V 500mW Surface Mount UB |
DataSheet: | 2N5114UB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 90mA @ 18V |
Voltage - Cutoff (VGS off) @ Id: | 10V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 15V |
Resistance - RDS(On): | 75 Ohms |
Power - Max: | 500mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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The 2N5114UB is a N-channel JFET (Junction Field Effect Transistor) nominally rated at 25V and 8A maximum current. It is widely used in many applications, such as digital logic and amplification. This transistor offers excellent switching performance and stability when used in these applications.
2N5114UB Application Field and Working Principle
A JFET is a type of transistor with two p-type and n-type semiconductor terminals that together form a pn-junction. This device is designed to be controlled by an electric field, as opposed to the traditional base current approach. As a result, JFETs are classified as junction field-effect transistors (JFETs).
In terms of application fields, they are widely used in analog and digital circuits. They are ideal for low power, current limiting and voltage regulator applications. They can also be used as analog switches and amplifiers, providing low noise and high gain.
Given the unique design of JFETs, these devices are particularly suitable for use in amplifying weak signals due to their low input impedance and high current gain. Thanks to the strong insulating properties of the JFET\'s gate terminal, these devices are also used for preventing short circuits or voltage spikes from entering the circuit. This can be useful for relays, time delay circuits and sensor circuits.
When it comes to the working principle of 2N5114UB, it is largely similar to other JFETs. The device has two p-type (source and drain) and one n-type (gate) semiconductor terminals. The source and drain terminals are reverse-biased which contributes to an electric field. The gate terminal is the controlling element of this device and works by restricting the current flow through it.
The amount of current flowing through the device depends on the amount of reverse-biased voltage applied and the built-in channel resistance. When the gate voltage exceeds a certain point, the channel and source conductors become depopulated and the device is said to be in the ‘off’ state. Conversely, when the gate voltage is below a certain point, the device will be in the ‘on’ state.
The 2N5114UB is a robust transistor with excellent current-handling capabilities and the ability to withstand large voltage changes. Thanks to its uniform on-state current-characteristics, it can be used in many demanding switching applications. It is also suitable for linear circuit applications where low noise and high gain are required.
Overall, the 2N5114UB is a robust and reliable N-channel JFET that offers excellent switching performance and stability. It is well suited for analog switching and amplification applications, providing low noise and high gain. With its low input impedance, it is also ideal for amplifying weak signals and reliable enough to prevent short circuits or voltage spikes from entering the circuit.
The specific data is subject to PDF, and the above content is for reference
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