2N5191G Allicdata Electronics
Allicdata Part #:

2N5191GOS-ND

Manufacturer Part#:

2N5191G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 4A TO225AA
More Detail: Bipolar (BJT) Transistor NPN 60V 4A 2MHz 40W Throu...
DataSheet: 2N5191G datasheet2N5191G Datasheet/PDF
Quantity: 2869
Stock 2869Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Power - Max: 40W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: 2N5191
Description

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2N5191G is a general purpose, small signal PNP bipolar junction transistor (BJT). It is widely used in current amplifying circuits and voltage amplifiers. It also can be used for switching circuits, linear amplifiers, voltage regulators and several other applications.

The basic structure of this BJT consist of three regions which are emitter, collector and base regions. These regions carries different polarities and hence BJT acts as an electric switch. The emitter region is heavily doped and serves as the source of charge carriers. The base region is lightly doped and provides very low voltage drop. The collector region is moderately doped because it provides high current gain. To turn the BJT in on state, a base bias voltage is applied between the base region and the emitter region. As a result, the base-emitter junction is forward biased and the collector current starts to flow. In the off state, no base bias voltage is applied and the collector current stops to flow.

The overall gain of the BJT can be observed by calculating the ratio of collector to emitter current (collector current/emitter current). This ratio has to be kept low to make sure that the BJT will work in its intended mode. It is also important to make sure that the input signal applied to the BJT is not any greater than the allowable voltage. Otherwise, this can cause the BJT to saturate and the output signal might get distorted.

2N5191G can be used in many applications such as amplifier circuits, oscillator circuits, switching circuits, voltage regulators and many other electronic circuits. In amplifier circuits, the BJT can be used to provide gain to the input signal. It can also be used to provide input impedance to the output signal. In switching circuits, the BJT can be used to provide a low current, high voltage switch. In oscillator circuits, it can be used to provide an AC output signal. In voltage regulator circuits, it can be used to provide stable voltage to the load.

The 2N5191G can also be used as a temperature sensing device. With the help of a transistor and a thermistor, it can be used as a temperature sensor. The thermistor can be used to sense the temperature, while the transistor can be used as a switch to turn the device on or off based on the temperature of the environment. It can also be used as a voltage regulator as it can provide a constant and stable voltage regardless of the input voltage. This makes it very reliable in situations where the input voltage fluctuates.

2N5191G is an extremely versatile and reliable BJT and can be used in various applications. It can be used to amplify voltage and current signals, as well as being used as a switch in circuits. It can also be used as a temperature sensing device, a voltage regulator and much more. It is normally used in low power applications due to its low current gain but can be used in higher power applications when combined with other components. This makes it a very important part for many electronic Circuits and systems.

The specific data is subject to PDF, and the above content is for reference

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