2N5179 Discrete Semiconductor Products

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Transistors - Bipolar (BJT) - RF

A 2N5179 is a type of bipolar junction transistor (BJT) that is commonly used for radio-frequency (RF) applications. It is a PNP device, meaning that its collectors and emitters are interconnected so that electrons can flow from the emitter to the collector. This type of transistor has a higher current gain, greater power dissipation capability, and higher frequency response than other types of transistors. This makes it ideal for use in high-frequency electronics.

The 2N5179 is an epitaxial lateral PNP device and is available in various EU and RoHS compliant packaging. It is suitable for use in the general-purpose, high-frequency amplifier, switching, and other circuits. It has a high current gain (hFE) of 300 at 4.0V and a max collector-base voltage of -70V. It also has a max collector-emitter voltage of -50V and an emitter-base voltage of -6V. The maximum power dissipation is 500mW and the maximum frequency of oscillation is 1GHz.

The main working principle behind the use of this type of transistor is the fact that current flow through it is proportional to the voltage applied to its base. This voltage, in turn, induces a flow of current through the other two electrodes, the collector and emitter. This current flow then produces power amplification. This is done by changing the amount of current flowing from one side to the other and influencing the voltage level of the output signal.

In addition to being used for amplifying signals, the 2N5179 is also used for switching applications. When these transistors are used as switches, they can provide fast and efficient switching between two different electrical states. This can be done by applying a small amount of current to the base, which in turn causes the circuit to switch between two different states, either fully on or fully off.

The 2N5179 is a versatile type of BJT that can be used in many different electronic applications. It has a high current gain, which makes it suitable for use in high-frequency and switching circuits. Furthermore, it also offers excellent switching performance and reliability. As a result, it is a popular choice for radio-frequency applications, although it also finds use in other applications.

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