Allicdata Part #: | 2N5486_D26Z-ND |
Manufacturer Part#: |
2N5486_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 20MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 15V 400MHz TO-92-3 |
DataSheet: | 2N5486_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 400MHz |
Gain: | -- |
Voltage - Test: | 15V |
Current Rating: | 20mA |
Noise Figure: | 4dB |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5486 |
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2N5486_D26Z is a n-channel junction field effect transistor (JFET) manufactured by EKL Components for RF applications. It has a metal-oxide-semiconductor (MOS) structure, which gives it a wide frequency range, low noise level and high linearity performance. The main applications of 2N5486_D26Z are in amplifying and switching circuits.
The 2N5486_D26Z is composed of two pnp transistors, two n-type metal-oxide-semiconductor (NMOS) transistors, one EKL component and one parasitic diodes. The two pnp transistors act as a source and drain, while the two NMOS transistors act as the gate. The component is designed with a gate-source voltage of ±70 V, drain current of 0.08 A, and power dissipation of 0.5 W. Each transistor has a separate gate and drain, allowing for either one active or two semi-active and three passive transistors.
The working principle of the 2N5486_D26Z is based on the electron field-effect. It is a voltage-controlled device, which uses the drain current to control the gate voltage. It is operated in the depletion mode, which means that the drain current is limited when the gate voltage exceeds the break-down voltage. This allows for amplifying and switching applications.
In amplifying applications, the device acts as an amplifier due to its voltage-sensitivity. When a positive gate voltage is applied, the drain current increases and the drain voltage drops. This results in an increase of the device’s transconductance and hence in an increase of its gain. In switching applications, the device can be used to switch on and off high frequency signals due to its fast switching action.
Due to its low power consumption, high frequency range and high linearity performance, the 2N5486_D26Z is ideal for RF applications. It is used in many RF devices such as radio transmitters, receivers and mixers, digital radio receivers, modems, and digital television receivers. The device is also suitable for audio applications such as amplifying high-speed digital signals and for other linear applications such as voltage-controlled optical transceivers.
In conclusion, the 2N5486_D26Z is a versatile n-channel junction field effect transistor manufactured by EKL Components for RF applications. It is composed of two pnp transistors, two n-type metal-oxide-semiconductor transistors, one EKL component and one parasitic diodes. The device is operated in the depletion mode and is used in many RF devices and other linear applications due to its voltage-sensitivity and fast switching action.
The specific data is subject to PDF, and the above content is for reference
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