Allicdata Part #: | 2N5550_J24Z-ND |
Manufacturer Part#: |
2N5550_J24Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 140V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625... |
DataSheet: | 2N5550_J24Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5550 |
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2N5550_J24Z Application Field and Working Principle
The 2N5550_J24Z is a PNP type bipolar transistor. It belongs to the category of transistors known as Bipolar Junction Transistors (BJT) which is specifically categorized into single transistors. It is usually used in commercial and industrial applications such as RF amplifiers and switching applications.
The 2N5550_J24Z is a three terminal device used for gain, switching and amplification purposes. It is a very common device since it is a low cost high performance device with good frequency response and power efficiency. It also has excellent temperature stability, making it suitable for a variety of applications.
In brief, the working principle of a bipolar transistor is governed by the flow of current in one direction, which is through the base-emitter junction. This is called the forward bias. When the base-emitter junction is forward biased, electrons will flow from the emitter to the base, which in turn creates a hole in the emitter. This charge is then selectively allowed to flow through the collector-base junction into the collector.
As the current flowing through the collector-base junction is varied, the collector current is correspondingly varied. This is due to the fact that the base-emitter junction will pass more current with a given base current when there is more current flowing through the collector-base junction. By controlling the base current, the gain or amplification of the transistor can be controlled.
One of the most common applications of the 2N5550_J24Z is in signal amplification and switching. It is used in RF amplifiers, signal amplifiers, audio signal amplifiers and power transistors. It is also used in switching circuits, such as DC-DC converters and voltage regulators.
The 2N5550_J24Z is an ideal choice for many applications due to its excellent frequency response and power efficiency. It provides a high input impedance and a low output impedance, making it suitable for a variety of signal amplifying and switching applications. It also has good temperature stability, making it a good choice for applications in extreme climatic conditions.
In summary, the 2N5550_J24Z is a PNP type bipolar transistor that is classified into the single transistors category. It is mainly used for gain, switching, and amplifying purposes. It is a very common device due to its low cost and high performance. It has excellent frequency response, power efficiency, and temperature stability, making it ideal for use in RF amplifiers, signal amplifiers, audio signal amplifiers, power transistors, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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