Allicdata Part #: | 2N6028RLRAOSCT-ND |
Manufacturer Part#: |
2N6028RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | THYRISTOR PROG UNIJUNCT 40V TO92 |
More Detail: | Programmable Unijunction Transistor (UJT) 40V 300m... |
DataSheet: | 2N6028RLRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Voltage: | 40V |
Power Dissipation (Max): | 300mW |
Voltage - Output: | 11V |
Voltage - Offset (Vt): | 600mV |
Current - Gate to Anode Leakage (Igao): | 10nA |
Current - Valley (Iv): | 25µA |
Current - Peak: | 150nA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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The 2N6028RLRA is a UniJunction Transistor (UJT) developed by Semelab. It is typically used in high power applications, and can be programmed to have different properties. The most common application fields for this type of transistor are in the control of switching operations and the control of power inverters.
A UniJunction Transistor (UJT) is a type of three-terminal semiconductor device that works as a switch or small current amplifier. It consists of a single layer of n-type semiconductor material in which the electrons are free to move. It has two PN junctions, with one PN junction connecting the positive and negative currents while the other PN junction connects two different types of semiconductor material.
The 2N6028RLRA is particularly useful for applications that require a high level of precision and accurate switching. Its main components This transistor\'s main components include a substrate, emitter, and base. The substrate is a semiconductor material on which the other components are mounted. The emitter is the terminal that provides a current to the transistor, and the base connects to the substrate and the collector.
The transistor\'s working principle is based on the fact that a strong electric field can be applied to the substrate between the emitter and the collector. This electric field causes the electrons to move along the surface of the substrate and create an electric current. The current that is created causes the voltage on the collector to be higher than that on the emitter and thus, a current is caused to flow through the collector.
The working of the 2N6028RLRA is based on a UJT basic structure. This basic structure consists of two PN junctions that are connected in series. The two PN junctions are coupled in such a way that when a potential is applied to the emitter, it will cause electrons to flow from the emitter to the collector. This causes the transistor to switch; when a positive potential is applied to the emitter, the transistor is on, and when a negative potential is applied to the emitter, it is off.
The applications of the 2N6028RLRA include control of switching operations, control of power inverters, and other high-power applications. This transistor is also used for pulsed operation in a variety of commercial and industrial applications. It is particularly useful for applications in which precision and accuracy are very important. Additionally, this type of transistor can be used in a variety of pulse-width modulation (PWM) applications, such as frequency modulation (FM) of signals.
In summary, the 2N6028RLRA is a UniJunction Transistor (UJT) designed by Semelab. It is primarily used in high-power applications and can handle a variety of pulsed operations. The main components of this transistor include a substrate, emitter, and base. Its working principle is based on the application of a strong electric field between the emitter and the collector. The applications of this type of transistor include controlling switching operations, controlling power inverters, and other high-power applications, as well as other pulse width modulation (PWM) applications. This type of transistor is an ideal choice for applications in which precision and accuracy are important.
The specific data is subject to PDF, and the above content is for reference
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