2N6034G

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The 2N6034G is a small signal, low power and low noise NPN transistor designed for use in amplifiers, switches and general purpose applications. This device is intended for high frequency analog circuits and radio frequency (RF) amplifiers in the frequency range of 500 kHz to 1.5 GHz.

Developed by On Semiconductor, this device features low noise operation, high gain, low power consumption and excellent linearity for use in low voltage, low noise amplifiers and application switches. It is available in a hermetic TO-5 package, providing high performance, small size, and improved heat dissipation.

2N6034G Application Field and Working Principle

The 2N6034G transistor is used in a variety of applications, including RF amplifiers, mixer circuits, voltage-controlled oscillators, transceivers, and optical fiber amplifiers. In addition, it is used in intelligent transceivers, satellite circuits, analog-to-digital converters and digital-to-analog converters.

The 2N6034G is a bipolar NPN transistor, where N-type semiconductor material is used as the emitter region and P-type semiconductor material is used as the base region. It has its three terminals, collector, base and emitter. When a voltage is applied to the base terminal, a controlled electron current flows from the emitter to the collector terminal, thereby turning the device “on” or “off”. This phenomenon is known as the transistor action.

These transistors act as an amplifier in a circuit because they can control the current between the collector and the emitter. When a small current enters the base of the transistor, the resulting current between collector and emitter is much stronger than the input current. This current amplification property of the transistor makes it an important component for signal amplification and switching.

The 2N6034G is characterized by the following properties: low noise operation, high gain, low power consumption, excellent linearity and good frequency response. Furthermore, it has good power dissipation and its hermetic package provides excellent protection from moisture, dust and vibration.

The maximum power dissipation of the 2N6034G is 1W, with a DC collector-emitter voltage of 20V, a DC collector-emitter voltage of 70V, and a collector current of 600mA. The maximum gain for the device is 25dB, and the maximum frequency at which it can operate is 1.5GHz.

In summary, the 2N6034G is a low power, low noise NPN transistor designed for use in a variety of applications, including amplifiers, switches and general purpose circuits. It has excellent linearity, good frequency response and high gain, making it suitable for low voltage, low noise amplifier and switch applications.

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