2N6059 Allicdata Electronics

2N6059 Discrete Semiconductor Products

Allicdata Part #:

2N6059MS-ND

Manufacturer Part#:

2N6059

Price: $ 31.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP POWER TRANSISTOR SILICON AMP
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N6059 datasheet2N6059 Datasheet/PDF
Quantity: 1000
100 +: $ 28.52720
Stock 1000Can Ship Immediately
$ 31.38
Specifications
Series: *
Part Status: Active
Description

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The 2N6059 is a silicon epitaxial-base PNP transistor with high power handling capacity. It is designed to be used in applications such as audio amplifiers, switching power supplies, and high-power RF amplifiers. The 2N6059 features low-noise operation and excellent thermal stability.

The basic construction of a 2N6059 transistor is comprised of three main components: the base, the emitter, and the collector. The components are housed within a metal-oxide-semiconductor (MOS) package. The emitter is the terminal where electrons flow from the transistor, while the base is where current is controlled by a voltage that is applied in order to turn the device on or off. The collector is the terminal at which the electrons enter the transistor.

The 2N6059 transistor has a wide range of operating currents between 0.1 microampere and 1 ampere. It also has a very high gain of 200, which means that for every two volts applied to the base, there will be 200 volts at the collector. Furthermore, the 2N6059 has a high DC current gain of 160, which means it can amplify a small signal to a much larger one.

In order to understand the working principle of a 2N6059 transistor, it is necessary to understand the concept of biased operation. When the base is positively biased, it causes a greater number of holes to be created than electrons. This creates an imbalance in electron concentration, which in turn results in the buildup of an electric field, known as a depletion region, between the emitter and collector of the transistor.

When a voltage is applied to the base of the 2N6059, it drops across the base-emitter junction, causing the depletion region to expand. When a current is then applied from the emitter to the collector, it causes the depletion region to reduce and electron charge carriers to be injected into the collector region. This results in the transistor being able to conduct current from the emitter to the collector, creating an amplification of the signal.

The 2N6059 transistor is an ideal choice for applications that require high power handling capacity, low-noise operation, and excellent thermal stability. It is commonly found in consumer electronics, audio amplifiers, switching power supplies, and RF amplifiers. The device is highly reliable and durable, making it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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