2N6059 Discrete Semiconductor Products |
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Allicdata Part #: | 2N6059MS-ND |
Manufacturer Part#: |
2N6059 |
Price: | $ 31.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP POWER TRANSISTOR SILICON AMP |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N6059 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 28.52720 |
Series: | * |
Part Status: | Active |
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The 2N6059 is a silicon epitaxial-base PNP transistor with high power handling capacity. It is designed to be used in applications such as audio amplifiers, switching power supplies, and high-power RF amplifiers. The 2N6059 features low-noise operation and excellent thermal stability.
The basic construction of a 2N6059 transistor is comprised of three main components: the base, the emitter, and the collector. The components are housed within a metal-oxide-semiconductor (MOS) package. The emitter is the terminal where electrons flow from the transistor, while the base is where current is controlled by a voltage that is applied in order to turn the device on or off. The collector is the terminal at which the electrons enter the transistor.
The 2N6059 transistor has a wide range of operating currents between 0.1 microampere and 1 ampere. It also has a very high gain of 200, which means that for every two volts applied to the base, there will be 200 volts at the collector. Furthermore, the 2N6059 has a high DC current gain of 160, which means it can amplify a small signal to a much larger one.
In order to understand the working principle of a 2N6059 transistor, it is necessary to understand the concept of biased operation. When the base is positively biased, it causes a greater number of holes to be created than electrons. This creates an imbalance in electron concentration, which in turn results in the buildup of an electric field, known as a depletion region, between the emitter and collector of the transistor.
When a voltage is applied to the base of the 2N6059, it drops across the base-emitter junction, causing the depletion region to expand. When a current is then applied from the emitter to the collector, it causes the depletion region to reduce and electron charge carriers to be injected into the collector region. This results in the transistor being able to conduct current from the emitter to the collector, creating an amplification of the signal.
The 2N6059 transistor is an ideal choice for applications that require high power handling capacity, low-noise operation, and excellent thermal stability. It is commonly found in consumer electronics, audio amplifiers, switching power supplies, and RF amplifiers. The device is highly reliable and durable, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N6039 | STMicroelect... | 0.0 $ | 1000 | TRANS NPN DARL 80V 4A SOT... |
2N6038 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 60V 4A TO2... |
2N6034 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 40V 4A TO2... |
2N6040 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 8A TO2... |
2N6042 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 100V 8A TO... |
2N6045 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 8A TO... |
2N6043 | ON Semicondu... | -- | 1000 | TRANS NPN DARL 60V 8A TO2... |
2N6048 | Microsemi Co... | 0.0 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N6028 | Central Semi... | 1.53 $ | 2373 | PROGRAMMABLE UJT 40V TO22... |
2N6027 | Central Semi... | 0.67 $ | 1000 | PROGRAMMABLE UJT 40V TO22... |
2N6027RLRA | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028RLRA | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6027RLRAG | ON Semicondu... | -- | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028RLRAG | ON Semicondu... | -- | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6027G | ON Semicondu... | -- | 1000 | TRANS PROG UNIJUNCT 40V T... |
2N6027RL1 | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028G | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028RLRP | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6027RL1G | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028RLRMG | ON Semicondu... | 0.0 $ | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6028RLRPG | ON Semicondu... | -- | 1000 | THYRISTOR PROG UNIJUNCT 4... |
2N6076 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 0.5A TO-92B... |
2N6036 | STMicroelect... | -- | 1488 | TRANS PNP DARL 80V 4A SOT... |
2N6076_D26Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 0.5A TO-92B... |
2N6076_D27Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 0.5A TO-92B... |
2N6076_D75Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 25V 0.5A TO-92B... |
2N6049 | Microsemi Co... | 31.38 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N6051 | Microsemi Co... | -- | 1000 | PNP POWER TRANSISTOR SILI... |
2N6058 | Microsemi Co... | -- | 1000 | PNP POWER TRANSISTOR SILI... |
2N6059 | Microsemi Co... | 31.38 $ | 1000 | PNP POWER TRANSISTOR SILI... |
2N6045G | ON Semicondu... | -- | 516 | TRANS NPN DARL 100V 8A TO... |
2N6040G | ON Semicondu... | 0.6 $ | 1000 | TRANS PNP DARL 60V 8A TO2... |
2N6071BG | Littelfuse I... | -- | 48449 | TRIAC SENS GATE 200V 4A T... |
2N6075AG | Littelfuse I... | -- | 24900 | TRIAC SENS GATE 600V 4A T... |
2N6075BG | Littelfuse I... | -- | 22219 | TRIAC SENS GATE 600V 4A T... |
2N6073BG | Littelfuse I... | -- | 9667 | TRIAC SENS GATE 400V 4A T... |
2N6071AG | Littelfuse I... | -- | 7028 | TRIAC SENS GATE 200V 4A T... |
2N6073AG | Littelfuse I... | -- | 13167 | TRIAC SENS GATE 400V 4A T... |
2N6039G | ON Semicondu... | -- | 3677 | TRANS NPN DARL 80V 4A TO2... |
2N6043G | ON Semicondu... | -- | 2129 | TRANS NPN DARL 60V 8A TO2... |
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TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...