2N6036G

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• Transistors - Bipolar (BJT) - Single
  • 2N6036G application field and working principle
    • What is the 2N6036G?
      • The 2N6036G is a N-Channel vertical field-effect transistor (VFET) with a general purpose, high transconductance structure. It is designed for operation in applications from DC to 20 MHz, such as amplification and switching.
    • Application Field
      • The 2N6036G can be used in various applications such as audio amplifiers, switching applications, low noise amplifiers, and non-critical AC amplifiers.
      • It may also be used in communication amplifiers. It is suitable for amplifier applications in receivers, where a very low distortion or noise is required. It is also well suited for high speed switching applications.
    • General Diagram
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    • Working Principle
      • The 2N6036G operates with a depletion mode structure. It is constructed with an N-channel depletion region, which is a region where majority carriers (electrons) are majority carriers. The N-channel depletion region is flanked by two gate terminals. Applying a positive voltage to the gate will create an electric field and reduce the width of the depletion region, thereby creating a conducting channel between the source and drain.
      • The width of the depletion region and hence the current flowing through the device is controlled by the voltage applied to the gate, thus making the 2N6036G a voltage controlled field effect transistor. This makes it a useful component in switching and amplifier applications.
      • In addition to the voltage controlled channel, the 2N6036G also features a high transconductance, which improves its ability to switch and amplify, making it a good all-round choice for many applications.

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