2N6035G

The 2N6035G is an NPN silicon discrete power transistor made by TO-92 package and is part of the Bipolar (BJT), Single Transistor family. It is intended for general-purpose amplifier and switching applications. This device has very low collector-emitter saturation voltage, making it suitable for applications such as audio amplifiers and motor drivers.

Application Field

The 2N6035G is suitable for general-purpose amplifier and switching applications. It is used in power supplies, relay drivers, DC-DC converters, lamp drivers, piezo drivers, motor drivers, audio amplifiers, and non-inverting amplifiers. It can also be used in any application needing a discrete NPN power transistor.

Working Principle

A transistor is a semiconductor device that can be used as an amplifier or a switch. The 2N6035G is a bipolar NPN transistor that operates in the active region. An NPN transistor has three terminals connected to a semiconductor material: the base, the collector, and the emitter. When the base-emitter junction is forward biased, current can flow from the collector to the emitter. This is the operation of the device in the active region. In the 2N6035G, the orientation of the semiconductor material is such that the base is at a lower voltage than the emitter and collector. When the base is driven positively, the current starts flowing from the collector to the emitter. When the base voltage is increased, the collector current increases as well. The collector current is then proportional to the base current, making this transistor suitable for high-power applications.