2N6045G Allicdata Electronics
Allicdata Part #:

2N6045GOS-ND

Manufacturer Part#:

2N6045G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 8A TO220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: 2N6045G datasheet2N6045G Datasheet/PDF
Quantity: 516
Stock 516Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 75W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6045
Description

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A bipolar junction transistor (BJT) is one of the most commonly used electronic semiconductor components. One of the most widely used transistors of this type is the 2N6045G. The 2N6045G is a low-power general-purpose PNP transistor that is developed with improved performance over the original 2N6033 type. This transistor is designed for applications in the audio, power control, and automotive markets. It is frequently used in power amplifiers, audio preamps, and power supplies.

The 2N6045G is a "dual-diffused" transistor, which means that a germanium substrate is used to create two junctions (base-emitter and base-collector) in the device. This device is manufactured using a chip-forming process for enhanced performance and lower cost.

The 2N6045G is an NPN bipolar junction transistor. It is made from a silicon die and is typically used in medium current (1 A to 5 A) applications.

The 2N6045G\'s applications include high-current switch fan and light control. It is ideal for general purpose switching and current gain applications in electronics. It can also be applied in small-signal amplifiers and frequency control.

The transistor\'s working principle is based on electrical field effect. Basically, when a voltage is applied between the emitter and the base of the transistor, a current flows through the device. The current is then amplified or switched by the transistor. When the current reaches the collector and the base of the transistor, it is amplified and output to the load.

The 2N6045G is a versatile PNP transistor device with a relatively low self-driving voltage, which makes it suitable for a wide range of analog and digital circuits. It can be used as a switch, buffer, amplifier and motor controller, as well as for power control applications. The 2N6045G allows for a high switching speed, low power consumption, and improved circuit stability.

The 2N6045G is also relatively easy to use and is available in a variety of standard packages. It is designed to work with a wide range of power supplies, allowing for a great degree of flexibility in circuit design. This transistor type can also be used in temperature sensitive circuits, and is a good choice for applications that require high speed, low power consumption, and high stability.

In summary, the 2N6045G is a popular PNP bipolar junction transistor device. It is used in a wide variety of applications due to its high performance, low power consumption and cost. With a wide range of package options, it can be an ideal choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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