2N6076_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N6076

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2N6076_D27Z Application Field and Working Principle

The 2N6076_D27Z is a type of bipolar junction transistor (BJT) which falls into the category of single transistors. This type of transistor is suitable for use in a variety of power management, voltage regulation and linear operating applications. As a puissance switching element, it can be used for synchronous rectification allowing for efficient power conversion.To properly understand the workings of this transistor, it is important to first understand what is a bipolar junction transistor and its construction. In brief, a transistor is an active semiconductor device made of two separate p-n junctions that share a common e-region. The two p-n junctions are called the base and emitter. The base of the transistor serves as the control gate and is the terminal between the emitter and the collector terminals. In this way one can control the current flow within the collector-emitter path by controlling the current through the base. The current gain of the transistor, also known as the β of the device, is a measurement of the relationship between the base and emitter current and the collector current.The 2N6076_D27Z is characterized by its high voltage, high degree of avalanche breakdown and excellent thermal stability. It can be used in applications requiring switching between high voltages of up to 200 V, with continuous collector current ratings of up to 1A.The device works by using the injection of electrons from the base into the collector, causing a current flow from the collector to the emitter. As the electrons travel from the base to the collector, they are accelerated in an avalanche breakdown process through a built-in electric field due to the arising gaps in the electro-static force. This phenomenon is referred to as the B-E junction avalanche breakdown, and is responsible for allowing the device to function as an amplifier or switcher.The 2N6076_D27Z is further specified by a maximum drain-source breakdown voltage rating of 200 V, and a maximum drain current rating of 1 A. These ratings make the 2N6076_D27Z ideal for use in a variety of high voltage and power applications. As a switch, the device can be used to control the flow of current with fast response times, due to its low capacitance, switching losses and high-frequency performance.In conclusion, the main applications for the 2N6076_D27Z are in power management, voltage regulation and linear operating applications, where its unique characteristics make it a reliable and functional choice for these applications. With its high breakdown voltage, low capacitance and excellent thermal stability, the 2N6076_D27Z is suitable for a range of high voltage and power applications. Its use as a switch also adds to its utility, enabling efficient power conversion, as well as fast response times due to its low capacitance, switching losses and high-frequency performance.

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