Allicdata Part #: | 2N7224U-ND |
Manufacturer Part#: |
2N7224U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 100V 34A SMD1 |
More Detail: | N-Channel 100V 34A (Tc) 4W (Ta), 150W (Tc) Surface... |
DataSheet: | 2N7224U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-267AB |
Supplier Device Package: | TO-267AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 81 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N7224U is a Enhancement Mode Field Effect Transistor (FET) designed for use in many hybrid circuits and other applications. In relation to the 2N7000 and 2N7002, the 2N7224U has higher performance, and provides better switch on characteristics. It has a drain current of up to 500 mA, a drain-source voltage of up to 600 volts, and a gate-source voltage of up to 20 V.
A Field Effect Transistor (FET) is a type of transistor that affects current or voltage flow by applying an electric field. It relies on the movement of electrons or holes in a semiconductor material to control the current. FETs are used extensively in digital and analog circuitry, and can be used as amplifiers, switches, and oscillators. There are two main types of FETs: Metal Oxide Semiconductor (MOS) and Junction Field Effect (JFET). The 2N7224U is an MOS-FET type, which is characterized by its higher performance and smaller size compared to JFETs.
The 2N7224U consists of a source, drain, and gate electrodes formed on an oxide-insulated silicon base. When a voltage is applied to the gate, an electric field is created, which modifies the conductivity of the channel between the source and drain. This allows the current to flow from the source to the drain. The gate insulation layer provides two important functions: it serves as an electrostatic barrier between the gate and channel, and it provides a control or modulation of the channel.
The gate voltage of a FET can be used to control the gate current, as well as its source and drain currents. This makes it an ideal device for voltage-controlled amplifier stages and analog circuits. Additionally, the gate insulation layer provides high frequency isolation, resulting in very low gate-drain capacitance, which is ideal for high frequency switching applications. The 2N7224U is also well suited for logic applications, as its gate defines the on and off states of the device.
The 2N7224U has many applications, which include digital and analog switching, sensing, and power management. It is commonly used in hybrid circuits, RF amplifiers, power amplifier stages, voltage regulators, digital to analog converters, FET switches, oscillators, and radio transmitters. The 2N7224U is also used in applications such as logic gates and other digital logic functions.
The 2N7224U is a versatile and reliable device, capable of providing the performance and switching characteristics required in many applications. It is an ideal choice for applications where minimal power dissipation and low noise are required. The 2N7224U has become a mainstay in many circuits and systems, and its wide range of applications make it an indispensable component in the modern world.
The specific data is subject to PDF, and the above content is for reference
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