Allicdata Part #: | 2N7228U-ND |
Manufacturer Part#: |
2N7228U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V SMD1 |
More Detail: | N-Channel 500V 12A (Tc) 4W (Ta), 150W (Tc) Surface... |
DataSheet: | 2N7228U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-267AB |
Supplier Device Package: | TO-267AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 415 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N7228U is an enhancement-mode vertical silicon-gate field-effect transistor (FET). It is an ideal device for a variety of applications, from digital integrated circuits, to frequency control and power switching such as relays and lamp switching. In terms of properties and characteristics, the 2N7228U is suitable for use in a wide range of functions, including level shifting, low noise and high input impedance circuits, as well as audio and video line drivers and gain blocks. This article will discuss the features and characteristics of the 2N7228U as well as its applications in detail.
2N7228U Features and Characteristics
The 2N7228U is a vertical N-channel JFET, with an ambient temperature range from -65 to +150 degrees Celsius. It has a low gate threshold voltage of between 0.7 to 4 volts and a breakdown voltage of 30 volts. The gate leakage current is typically between 1 nano ampere and 100 pico ampere and the gate capacitance is typically between 10 pico Farads and 10 pico Farads. The 2N7228U has excellent thermal stability, high frequency operation, low switching temperature discrimintation, low resistance and low thermal noise generated during transition.
With regards to the packaging of the 2N7228U, it is typically available in a 3-lead TO-99 style package. In terms of the electrical characteristics, the 2N7228U has a low reverse current leakage and suitable mesh indices for both constant and variable currents. The gate edge capacitance is also adequately matched. The 2N7228U also offers an enhanced channel drain breakdown characteristics, which is suitable for use in current sources and Constant Current Diodes.
2N7228U Applications
As mentioned earlier, the 2N7228U is ideal for a wide range of applications that involve switching, level shifting, and low noise circuit design. Here are some of the applications for which the 2N7228U is commonly used:
- Level shifters and low-noise amplifiers
- Power switching applications such as relays and lamp control
- Frequency control circuits
- Output buffer stages, current amplifiers, and video and audio line drivers
- Gain blocks and constant current diodes
- Low-power inverters and logic circuits
2N7228U Working Principle
The principle of the 2N7228U is based on the idea of a “gate”, which is made up of two distinct elements – the source and the drain. When a voltage is applied to the gate, a potential barrier is formed between the two elements, restricting the flow of current in the channel. This is a basic form of transistor operation, and the flow of current can be controlled by varying the voltage applied to the gate.
In the case of the 2N7228U, the gate threshold voltage needs to be in the range of 0.7 to 4 volts in order to activate the device. Once the voltage is reached, the device will begin to conduct current, allowing it to be used in level shifting and low-noise amplifier circuits. The low thermal noise generated during the transition process also make the 2N7228U ideal for applications that require very low noise operation.
Conclusion
In summary, the 2N7228U is an enhancement-mode vertical silicon-gate field-effect transistor (FET) which offers a range of features and characteristics that make it ideal for a variety of applications, such as level shifting, low noise and high input impedance circuits, as well as audio and video line drivers; and gain blocks. With a gate threshold voltage of between 0.7 to 4 volts, and a breakdown voltage of 30 volts, it is suitable for both constant and variable currents, low resistance and low thermal noise operation. The 2N7228U is also available in a 3-lead TO-99 style package.
The specific data is subject to PDF, and the above content is for reference
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