Allicdata Part #: | 2N7225U-ND |
Manufacturer Part#: |
2N7225U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V SMD1 |
More Detail: | N-Channel 200V 27.4A (Tc) 4W (Ta), 150W (Tc) Surfa... |
DataSheet: | 2N7225U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-267AB |
Supplier Device Package: | TO-267AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27.4A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N7225U is a type of metal-oxide semiconductor field-effect transistor (MOSFET) designed specifically for Military/Aerospace applications. These MOSFETs have excellent heat and electrical performance, making them suitable for extreme conditions. This article will discuss the application fields and working principles of the 2N7225U MOSFET.
The 2N7225U is typically used in switched mode power supplies, high-efficiency switching regulators, high precision converters, drive circuits, and low-dropout linear regulators. It is also used in circuits such as motor controllers, solenoids, and high current switches. Because of its high power dissipation and low gate threshold voltage, the 2N7225U is an ideal choice for high power applications.
The 2N7225U is constructed from a silicon wafer, which is a semiconductor material. The wafer is doped with different compounds to create an n-type and p-type material which form three metal-oxide layers. The first layer is the source, the second is the gate, and the third is the drain. The source and the drain are connected by metal wires which provide a current path.
The source and the drain of the 2N7225U are connected to the power supply. When the voltage at the gate is higher than the threshold voltage, it creates an electric field around the gate and creates a channel between the source and the drain. This allows current to flow from the source to the drain. This flow is called an inversion layer and is used to control the current flow in the circuit.
The working principle of the 2N7225U is based on the theory of depletion-mode operation. When the gate voltage is low, the current flowing between source and drain is blocked by the depletion layer. When the gate voltage rises above the threshold voltage (Vth), the depletion layer disappears and current flows freely. This is known as enhancement-mode operation.
The 2N7225U also has a built-in protection feature which limits the voltage applied to the gate. This prevents the gate from being subjected to overvoltage which can damage the MOSFET. The 2N7225U also has a temperature-compensated operating range which allows the MOSFET to be used in temperature extremes.
In conclusion, the 2N7225U is an excellent choice for a variety of applications where extreme conditions exist. Its high power dissipation and low gate threshold voltage make it an ideal choice for high power applications. Its built-in protection features make it a safe choice for applications where overvoltage can be an issue. Its temperature-compensated operating range makes it a reliable choice for temperature extremes. Its working principle is based on depletion-mode operation, which limits current between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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