2N7227

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package:	TO-254AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	4W (Ta), 150W (Tc)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	315 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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The 2N7227 is an n-channel enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a voltage controlled device, meaning that the gate voltage controls the conduction through the transistor. This allows for the construction of circuits which can amplify or switch a wide range of signals, depending on its application.The 2N7227 has a maximum drain-source voltage of 25V, a continuous drain-source current of 28mA, and a maximum gate-source voltage of ±20V. It is rated at 1 Watts, meaning that it can safely dissipate up to 1 Watt of heat. This makes it a very versatile device which can be used in a wide range of applications.The 2N7227 can be used for any application which requires a voltage controlled device, such as high speed switching, voltage regulation, and current switching. It can also be used in low power logic (TTL/CMOS) circuits as well as in active loads, such as voltage comparators.The 2N7227 operates on the principle of MOSFET, which is an acronym for Metal Oxide Field Effect Transistor. The working principle of a MOSFET is based on the flow of current through a semiconductor material. The transistor is composed of a “source” and “drain”, which are both connected to a “gate” by an insulated gate oxide layer. When a positive voltage is applied to the gate, it creates an electric field which attracts charges to the gate, thus allowing current to conduct through the source-drain channel. This phenomenon is called channel modulation and allows for very high impedance amplification.The channel can be further modulated by varying the gate voltage. This allows for the construction of voltage-controlled devices such as the 2N7227, which can amplify or switch a wide range of signals depending on its application.The 2N7227 is a versatile device which can be used in a variety of applications. It can be used in high speed switching, voltage regulation, and current switching. It is also ideal for use in low power logic (TTL/CMOS) circuits as well as in active loads, such as voltage comparators. With its high drain-source voltage and continuous drain-source current rating, the 2N7227 can be used in applications where power switching is required.In conclusion, the 2N7227 is an n-channel enhancement mode Metal Oxide Field Effect Transistor which is rated at 1 Watt and offers a wide range of applications. The 2N7227 is based on the working principle of MOSFET and can be used in high speed switching, voltage regulation, and current switching. It is ideal for use in low power logic (TTL/CMOS) circuits as well as in active loads, such as voltage comparators. With its versatile features, the 2N7227 is a great choice for any application that requires voltage controlled device.

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