| Allicdata Part #: | 2N7236U-ND |
| Manufacturer Part#: |
2N7236U |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET P-CH 100V SMD1 |
| More Detail: | P-Channel 100V 18A (Tc) 4W (Ta), 125W (Tc) Surface... |
| DataSheet: |  2N7236U Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-267AB |
| Supplier Device Package: | TO-267AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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The 2N7236U is a single-junction field-effect transistor (FET) that works on a silicon monolith with either an n-type or a p-type substrate material. This type of component is also known as a metal oxide semiconductor field effect transistor (MOSFET). In which the operation of the device is based on the change in the channel resistance when an external electric field is applied to the channel.
Application field
The 2N7236U is used in electronic applications such as audio amplifiers, voltage regulators, voltage controlled oscillators and switching circuits. It is also used in power control and voltage level detector circuits. This type of component is used in radio frequency (RF) applications, and is used to design low-distortion analog filters. It is also used in high-speed switching applications, such as in logic circuits.
Working principle
The 2N7236U FET operates by modulating the current flow between source and drain terminals. When a voltage is applied to the gate terminal, it induces a positive or negative electric field on the body portion of the component, which then alters the pr
The specific data is subject to PDF, and the above content is for reference
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