2SA1312-BL(TE85L,F Allicdata Electronics
Allicdata Part #:

2SA1312-BL(TE85LFTR-ND

Manufacturer Part#:

2SA1312-BL(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 120V 0.1A S-MINI
More Detail: Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150...
DataSheet: 2SA1312-BL(TE85L,F datasheet2SA1312-BL(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The 2SA1312-BL is a transistor belonging to the single bipolar junction transistor (BJT) family. It is designed for use in high-power medium-voltage circuits and is particularly suitable for power supply and voltage regulation applications.The 2SA1312-BL transistor has a low saturation voltage and a high breakdown voltage of up to 250 V. It also has a high temperature coefficient of hFE, which ensures superb linear operation.The 2SA1312-BL transistor is a three terminal device with an emitter, base and collector. It is a NPN transistor by design and consists of a wide base and a heavily doped emitter, which is surrounded by a heavily doped collector that is protected from a retarding effect by a thin oxide layer.The 2SA1312-BL operates on the principle of doping. A p-type materials have been heavily doped with electrons to create an electron rich layer whereas an n-type material layer is heavily doped with holes to create a hole rich layer. When the p-type materials and n-type materials are brought in close contact with each other at the junction, electrons from the n-type flow into the p-type and holes from the p-type flow into the n-type and cause a depletion region to form at the junction.The 2SA1312-BL is usually used as a current amplifier or switch in a circuit. This is because it allows current to flow in either direction. When a voltage is applied to the base, the current is amplified through the emitter and the collector which results in the output voltage being generated. This is referred to as forward biased. If the voltage is removed, the current stops flowing and it is said to be reverse biased. The 2SA1312-BL has several advantages over other transistors such as its low saturation voltage, high collector-emitter breakdown voltage and high temperature coefficient of hFE. This means that it is capable of handling large currents and provides excellent linear operation. Its wide base allows for greater control over the current amplification and makes it well suited for power supply and voltage regulation applications.When choosing a transistor such as the 2SA1312-BL you need to consider the application field and its working principle. You will need to ensure that the device you select is suitable for the application you need it for and that it is capable of delivering the required results. It is important to remember that transistors are sensitive devices and should be handled with great care. Additionally, the necessary safety precautions should always be observed when using the device.

The specific data is subject to PDF, and the above content is for reference

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