Allicdata Part #: | 2SA1020-YT6F(J-ND |
Manufacturer Part#: |
2SA1020-Y,T6F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020-Y,T6F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SA1020-Y,T6F(J is a silicon based NPN transistor. It is a commonly used single-discrete bipolar junction transistor (BJT). The 2SA1020-Y,T6F(J mainly performs the amplification of small ac signals such as those that emanate from audio devices, amplifiers, televisions, computers, PLCs and small automatic control applications. It is typically used in circuits that require very low noise and fast changes in current signals to be detected.
The 2SA1020-Y,T6F(J functions as a current-controlled switch. It is composed of a base, a collector and an emitter. When current runs through the emitter, it provides a signal to the collector. The collector then amplifies the signal and passes it on to the base. The transistor acts as a switch, controlling current flow between the collector and the emitter. When a current signal is sent to the base, this current causes a change in the base-emitter voltage and thus changes the current flowing through the transistor. This change in current allows the transistor to amplify the signal.
The 2SA1020-Y,T6F(J is also often used in linear amplifiers, switching circuits and RF amplifiers. It has a maximum rating of 1A and voltage of -20V and a PNP package. Due to its small size it is often used for high-speed and low noise applications, as it can respond quickly to changeable signals. It has a typical gain of more than 1000, provided by its moderate current gain hFE and its high voltage gain.
The operating temperature range for this transistor is -55 to +150°C, which makes it suitable for use in a range of temperatures. The device has a high collector-emitter breakdown voltage of 150V, which makes it reliable and robust in application scenarios. It also has a low saturation voltage of 0.1V and a low turn on voltage of 0.7V, which allows it to be used in applications requiring fast switching and low quiescent current.
The 2SA1020-Y,T6F(J has a wide range of applications, including RF amplifiers, switched mode power supplies, low noise preamps, low voltage, high current switches and audio amplifiers. In addition, it is used in combination with other transistors for logic-level switching, interface circuits, and the design of active filters. The device is also employed in the design of voltage regulators, automotive electronics, and many other complex circuits.
In conclusion, the 2SA1020-Y,T6F(J is a single-discrete bipolar junction transistor that is primarily used as a current-controlled switch. It is used in various applications, including RF amplifiers, switching circuits, low noise preamps, audio amplifiers and automotive electronics. It has a high collector-emitter breakdown voltage, low saturation voltage and low turn on voltage, making it suitable for use in fast switching and low quiescent current applications.
The specific data is subject to PDF, and the above content is for reference
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