| Allicdata Part #: | 2SA1020-O(FM)-ND |
| Manufacturer Part#: |
2SA1020-O(F,M) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PNP 2A 50V TO226-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
| DataSheet: |  2SA1020-O(F,M) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
| Power - Max: | 900mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package: | TO-92MOD |
Description
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The 2SA1020-O(F,M) is a single bipolar junction transistor (BJT) produced by Toshiba. It is a PNP transistor with an amplified current gain of 1020 and voltage operations of 150V/3A. The 2SA1020-O(F,M) has a maximum power dissipation of 2.4W and a minimum noise figure of -30dB. It is a high-performance transistor, designed for use in space-constrained applications and to operate over a wide temperature range.
The 2SA1020-O(F,M) is a versatile and reliable transistor, suitable for a variety of applications. It is used in audio amplifiers, high-end amplifiers, power amplifiers, and low-voltage circuit designs. It can be used in switching circuits, voltage regulators, and RF applications. In addition, it is also used in instrumentation and signal conditioning circuitry.
The most significant feature of the 2SA1020-O(F,M) is its large current gain of 1020. This means that the output current is amplified by a factor of 1020, which makes it an ideal transistor for high-power applications. The transistor also has a low turn-on voltage of 1.2V and a fast switching speed of 5V/µs. The large current gain and low power consumption make it suitable for use in high-end audio amplifiers.
The 2SA1020-O(F,M) is well-suited for use in medium to high-power switching applications. It has a large collector-emitter breakdown voltage of 150V, which makes it suitable for voltage regulator circuits. In addition, it has a fast switching speed, making it ideal for switching circuits operating at high frequencies. The large current gain and low thermal resistance also make it ideal for switching circuits operating at high temperatures.
The working principle of the 2SA1020-O(F,M) is based on the principles of bipolar junction transistors (BJT). BJTs consist of two junctions. One is the emitter-base junction and the other is the collector-base junction. When a small current is applied to the base, it controls the flow of current between the collector and the emitter. As the base current is increased, the collector-emitter current and voltage gain increases, resulting in increased power output. The 2SA1020-O(F,M) has a high-amplified current gain of 1020 and a low turn-on voltage of 1.2V, making it ideal for high-power applications.
In conclusion, the 2SA1020-O(F,M) is a single bipolar junction transistor (BJT) produced by Toshiba. It is a high-performance transistor, designed for use in space-constrained applications and to operate over a wide temperature range. It has a large current gain of 1020 and a low turn-on voltage of 1.2V, making it an ideal transistor for high-power applications. It is suitable for use in audio amplifiers, power amplifiers, switching circuits, voltage regulators, and RF applications. The working principle of the 2SA1020-O(F,M) is based on the principles of bipolar junction transistors.
The specific data is subject to PDF, and the above content is for reference
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