2SA1869-Y(JKT,Q,M)

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 2V
Power - Max:	10W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220NIS

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2SA1869-Y(JKT,Q,M) Application Field and Working Principle

The 2SA1869-Y(JKT,Q,M) is a single bipolar junction transistor (BJT) that is typically used in a variety of electronic applications such as television receivers, amplifiers, and photo detectors. It is manufactured using the vertical Diffused construction method and features an NPN structure. The advanced silicon chip design of this transistor provides for improved high current output and high gain ratio.

Design and Construction

The NPN structure of the 2SA1869-Y(JKT,Q,M) consists of three large sections: the collector, the base, and the emitter. The collector is the portion of the transistor that has the highest Current Capacity and highest Dissipation Capability. It works in conjunction with external components to provide the necessary charges to the device for functions such as Switching, amplification, and higher impedance level. The base section of the transistor is the region that acts as a gate between the collector and emitter sections. It is responsible for the current flow between the collector and the emitter. The emitter is the part of the device that provides a path of least resistance for the current flow from the collector to the external components. The metal-oxide-semiconductor construction of the 2SA1869-Y(JKT,Q,M) consists of multiple planar layers, which are deposited over a substrate in a helix-type spiral pattern. Within each layer, large transistors with multiple layer patterns are coupled with single layers. These create a tight mesh network, which improves on the effectiveness of the device performance. This mesh network is responsible for providing high-current output with low input noise.

Functionality

The basic function of the 2SA1869-Y(JKT,Q,M) is to act as a switch for controlling the flow of electricity to a load. The device is designed to switch electrical signals from a low to a high voltage and vice versa. It works by connecting the collector and base terminals of the transistor, creating a small current flow, which then moves to the emitter terminal. The current flow at the emitter is then amplified by the device’s amplification process, allowing the device to act as an electrical switch.The 2SA1869-Y(JKT,Q,M) can also be used as an amplifier or an oscillator. As an amplifier, the device is used to add a greater magnitude of voltage to a signal, thus amplifying its effect. As an oscillator, the device is used to create a sustained cycle of electrical signals, which can then be varied to create different tones, pitches, frequencies, etc.

Features and Benefits

The 2SA1869-Y(JKT,Q,M) is a high performance, low-noise power transistor. It is designed for use in audio amplifiers, radio receivers, and consumer electronics. Its high current rating makes it capable of handling large-scale applications. The main benefit of using this device is that it is extremely reliable and efficient, providing better signal transition compared to other similar devices. It is also cost effective and consume less power than other transistors. Additionally, the device features a wide operating temperature range which makes it suitable for use in harsh environments. Finally, the device is highly durable, with a high reliability and service life.

Conclusion

The 2SA1869-Y(JKT,Q,M) is an advanced single bipolar junction transistor designed for a variety of electronic applications. Its vertical Diffused construction and NPN structure provides for improved high current output and high gain ratio. The device is designed to switch, amplify, and create oscillations, making it suitable for a variety of applications. Additionally, the device is reliable and efficient, providing better signal transition compared to similar devices. It is also cost effective, consumes less power, and is highly durable and long lasting. All of these features make the 2SA1869-Y(JKT,Q,M) a suitable choice for many applications.

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